⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28368498 | 0.91 | — | — | |
| SCHEMBL28119028 | 0.91 | — | — | |
| SCHEMBL20591197 | 0.91 | — | — | |
| SCHEMBL42137 | 0.89 | — | — | |
| SCHEMBL939407 | 0.89 | — | — | |
| SCHEMBL1696972 | 0.80 | — | — | |
| SCHEMBL22574411 | 0.80 | — | — | |
| SCHEMBL447655 | 0.80 | — | — | |
| SCHEMBL1115973 | 0.80 | — | — | |
| SCHEMBL2897145 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 778 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250220928-A1 | SEMICONDUCTOR DEVICE WITH POWER GATING ELEMENT | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-07-03 | — | — | US | claimed |
| EP-4580340-A1 | SEMICONDUCTOR DEVICE WITH POWER GATING ELEMENT | Samsung Electronics Co., Ltd (KR) | 2025-07-02 | — | — | EP | claimed |
| CN-118824162-A | Display panel | 汇融科技有限公司 | 2024-10-22 | — | — | CN | claimed |
| CN-113012846-B | Conductive electrode, preparation method thereof and electronic equipment | 荣耀终端有限公司 | 2024-03-26 | — | — | CN | claimed |
| CN-116722044-A | Thin film transistor, preparation method thereof and display panel | 合肥维信诺科技有限公司 | 2023-09-08 | — | — | CN | claimed |
| CN-113012846-A | Conductive electrode, preparation method thereof and electronic device | 荣耀终端有限公司 | 2021-06-22 | — | — | CN | claimed |
| CN-105453272-B | Oxide semiconductor substrate and schottky barrier diode element | 出光兴产株式会社 | 2020-08-21 | — | — | CN | claimed |
| EP-2589085-B1 | THIN FILM TRANSISTORS | HEWLETT PACKARD DEVELOPMENT CO (US) | 2019-02-20 | — | — | EP | claimed |
| CN-105861294-B | A kind of heterojunction semiconductor DNA biosensor and its preparation and application | 上海工程技术大学 | 2018-09-11 | — | — | CN | claimed |
| CN-105861294-A | Semiconductor heterojunction DNA biological sensor as well as preparation and application thereof | 上海工程技术大学 | 2016-08-17 | — | — | CN | claimed |
| CN-104281305-A | Light-emitting displayer with touch function | HONGFUJIN PREC IND SHENZHEN | 2015-01-14 | — | — | CN | claimed |
| CN-104282678-A | Light-emitting displayer with light sensing function | HONGFUJIN PREC IND SHENZHEN | 2015-01-14 | — | — | CN | claimed |
| CN-104282708-A | Light-emitting displayer | HONGFUJIN PREC IND SHENZHEN | 2015-01-14 | — | — | CN | claimed |
| US-8823672-B2 | Touch panel display device | SAMSUNG DISPLAY CO., LTD. (KR) | 2014-09-02 | — | — | US | claimed |
| US-8669553-B2 | Thin film transistors | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) | 2014-03-11 | — | — | US | claimed |
| EP-2589085-A1 | THIN FILM TRANSISTORS | Hewlett-Packard Development Company, L.P. (US) | 2013-05-08 | — | — | EP | claimed |
| US-20130092931-A1 | THIN FILM TRANSISTORS | OREGON STATE UNIVERSITY (US) | 2013-04-18 | — | — | US | claimed |
| WO-2012002974-A1 | THIN FILM TRANSISTORS | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) | 2012-01-05 | — | — | WO | claimed |
| CN-117476696-B | Driving substrate and display panel | SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO.,LTD. (CN) | 2026-05-26 | — | — | CN | disclosed |
| CN-102779758-A | Manufacture method of thin film transistor and with indium zinc aluminum oxide as channel layer | UNIV FUDAN | 2012-11-14 | — | — | CN | disclosed |