SCHEMBL1719670

SCHEMBL1719670

CN(CO)CCO

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17605 0.85
Dimethylamine SCHEMBL3990355 0.83 MAPT (0.50)
SCHEMBL3194340 0.81 MAPT (0.56)
SCHEMBL7850457 0.81 MAPT (0.56)
Bromide SCHEMBL8460963 0.81
Fluoride SCHEMBL1811139 0.81
SCHEMBL7847303 0.81 MAPT (0.56)
Ammonia Solution, Strong SCHEMBL3796062 0.81
Water SCHEMBL1283690 0.81
Ethylene Glycol SCHEMBL28558185 0.81 MAPT (0.56)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108693718-B Resist stripping liquid composition 东友精细化工有限公司 2022-07-29 CN claimed
CN-108693718-A Anticorrosive additive stripping liquid controlling composition 东友精细化工有限公司 2018-10-23 CN claimed
CN-104629700-B A kind of sulfur elimination for being used to produce water oil well and water-producing gas well 成都理工大学 2018-05-01 CN claimed
EP-1031884-B1 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL CO (JP) 2012-01-11 EP claimed
US-7968507-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US claimed
US-20090084406-A1 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. 2009-04-02 US claimed
CN-101398639-A Composition for stripping and stripping method SAMSUNG ELECTRONICS CO LTD (KR) 2009-04-01 CN claimed
US-6638694-B2 Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) 2003-10-28 US claimed
US-20030186175-A1 RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME IKEMOTO KAZUTO (JP) 2003-10-02 US claimed
EP-1031884-A2 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2000-08-30 EP claimed
US-20240034930-A1 PATTERNING MATERIAL, PATTERNING COMPOSITION, AND PATTERN FORMING METHOD HUAWEI TECHNOLOGIES CO., LTD. (CN) 2024-02-01 US disclosed
CN-108693718-B Resist stripping liquid composition 东友精细化工有限公司 2022-07-29 CN disclosed
CN-108693718-A Anticorrosive additive stripping liquid controlling composition 东友精细化工有限公司 2018-10-23 CN disclosed
CN-104629700-B A kind of sulfur elimination for being used to produce water oil well and water-producing gas well 成都理工大学 2018-05-01 CN disclosed
WO-2017081003-A1 SUBSTITUTED PYRAZOLOPYRIDINAMINES BAYER PHARMA AKTIENGESELLSCHAFT (DE) 2017-05-18 WO disclosed
US-20040048761-A1 Cleaning composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2004-03-11 US disclosed
US-6638694-B2 Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) 2003-10-28 US disclosed
US-20030186175-A1 RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME IKEMOTO KAZUTO (JP) 2003-10-02 US disclosed
US-20030152874-A1 Photoresist stripping composition and process for stripping resist MITSUBISHI GAS CHEMICAL COMPANY INC. (JP) 2003-08-14 US disclosed
EP-1031884-A2 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2000-08-30 EP disclosed