Formaldehyde

Formaldehyde

SCHEMBL17201889

C=O.C=O.CC[Ru]C1=CC=CC1

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4260534 0.93
SCHEMBL3341774 0.87
SCHEMBL28774492 0.72
Bicarbonate SCHEMBL29242174 0.70
SCHEMBL52936 0.68
Carbon Monoxide SCHEMBL9218219 0.67
SCHEMBL14953811 0.66
Carbon Monoxide SCHEMBL1981498 0.65
SCHEMBL6706806 0.65
SCHEMBL3950005 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9735359-B2 Methods of forming a memory cell material, and related methods of forming a semiconductor device structure, memory cell materials, and semiconductor device structures MICRON TECHNOLOGY, INC. (US) 2017-08-15 US claimed
WO-2015164215-A1 METHODS OF FORMING A MEMORY CELL MATERIAL, AND RELATED METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE, MEMORY CELL MATERIALS, AND SEMICONDUCTOR DEVICE MICRON TECHNOLOGY, INC. (US) 2015-10-29 WO claimed
US-20150311437-A1 METHODS OF FORMING A MEMORY CELL MATERIAL, AND RELATED METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE, MEMORY CELL MATERIALS, AND SEMICONDUCTOR DEVICE STRUCTURES MICRON TECHNOLOGY, INC. (US) 2015-10-29 US claimed
US-10388872-B2 Memory cell materials and semiconductor device structures MICRON TECHNOLOGY, INC. (US) 2019-08-20 US disclosed
US-20170309820-A1 MEMORY CELL MATERIALS AND SEMICONDUCTOR DEVICE STRUCTURES MICRON SEMICONDUCTOR PRODUCTS, INC. 2017-10-26 US disclosed
US-9735359-B2 Methods of forming a memory cell material, and related methods of forming a semiconductor device structure, memory cell materials, and semiconductor device structures MICRON TECHNOLOGY, INC. (US) 2017-08-15 US disclosed
US-20150311437-A1 METHODS OF FORMING A MEMORY CELL MATERIAL, AND RELATED METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE, MEMORY CELL MATERIALS, AND SEMICONDUCTOR DEVICE STRUCTURES MICRON TECHNOLOGY, INC. (US) 2015-10-29 US disclosed
WO-2015164215-A1 METHODS OF FORMING A MEMORY CELL MATERIAL, AND RELATED METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE, MEMORY CELL MATERIALS, AND SEMICONDUCTOR DEVICE MICRON TECHNOLOGY, INC. (US) 2015-10-29 WO disclosed