SCHEMBL1741817

SCHEMBL1741817

Cl[SiH2][SiH](Cl)Cl

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL788128 0.71
SCHEMBL787980 0.71
SCHEMBL9766334 0.67
SCHEMBL432237 0.67
SCHEMBL4278687 0.67
SCHEMBL3916410 0.64
SCHEMBL3912221 0.64
SCHEMBL3953298 0.59
SCHEMBL29069966 0.59
SCHEMBL25283357 0.56

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 188 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4748968-A1 METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS Hansol Chemical Co., Ltd (KR) 2026-05-27 EP claimed
US-12635431-B2 High aspect ratio carbon layer etch with improved throughput and process window TOKYO ELECTRON LIMITED (JP) 2026-05-19 US claimed
EP-4667616-A1 METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR Hansol Chemical Co., Ltd (KR) 2025-12-24 EP claimed
US-20250369114-A1 METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR HANSOL CHEMICAL CO LTD (KR) 2025-12-04 US claimed
US-20250232981-A1 HIGH ASPECT RATIO CARBON LAYER ETCH WITH IMPROVED THROUGHPUT AND PROCESS WINDOW TOKYO ELECTRON LIMITED (JP) 2025-07-17 US claimed
EP-3516088-B1 A METHOD OF FORMING A SILICON-CONTAINING FILM ON A SUBSTRATE NATA SEMICONDUCTOR MAT CO LTD (CN) 2025-02-26 EP claimed
US-20250038003-A1 LOW TEMPERATURE MOLYBDENUM DEPOSITION ASSISTED BY SILICON-CONTAINING REACTANTS LAM RESEARCH CORPORATION (US) 2025-01-30 US claimed
CN-118685753-A Method for forming silicon nitride and system for performing the same ASM IP私人控股有限公司 2024-09-24 CN claimed
CN-118402040-A Low temperature molybdenum deposition assisted by silicon-containing reactants 朗姆研究公司 2024-07-26 CN claimed
US-20240222467-A1 METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2024-07-04 US claimed
US-7939447-B2 Inhibitors for selective deposition of silicon containing films ASM AMERICA, INC. (US) 2011-05-10 US claimed
US-7772097-B2 Methods of selectively depositing silicon-containing films ASM AMERICA, INC. (US) 2010-08-10 US claimed
WO-2009061599-A1 METHODS OF SELECTIVELY DEPOSITING SILICON-CONTAINING FILMS ASM AMERICA, INC. (US) 2009-05-14 WO claimed
US-20090117717-A1 METHODS OF SELECTIVELY DEPOSITING SILICON-CONTAINING FILMS ASM AMERICA, INC. (US) 2009-05-07 US claimed
US-20090111246-A1 INHIBITORS FOR SELECTIVE DEPOSITION OF SILICON CONTAINING FILMS ASM AMERICA, INC. (US) 2009-04-30 US claimed
EP-2030227-A2 METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES ASM America, Inc. (US) 2009-03-04 EP claimed
US-20080241748-A1 Etch-resistant disilane and saturated hydrocarbon bridged silicon-containing polymers, method of making the same, and method of using the same CHEIL INDUSTRIES, INC. (KR) 2008-10-02 US claimed
US-20080095691-A1 Apparatus and Process for Preparing Silanes DEGUSSA GMBH (GE) 2008-04-24 US claimed
US-20080026149-A1 METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES ASM AMERICA, INC. (US) 2008-01-31 US claimed
WO-2007140375-A2 METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES ASM AMERICA, INC. (US) 2007-12-06 WO claimed