SCHEMBL17433552

SCHEMBL17433552

CC(C)(C)CC(=O)CC(=O)[O-].CC(C)(C)CC(=O)CC(=O)[O-].CC(C)(C)CC(=O)CC(=O)[O-].CC(C)(C)CC(=O)CC(=O)[O-].[Ti+4]

nearest known ligand 0.43

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
CA4 P22748 3/20 0.43
FFAR3 O14843 1/20 0.31
HDAC3 O15379 1/20 0.31
HDAC1 Q13547 1/20 0.31
HDAC2 Q92769 1/20 0.31
HDAC8 Q9BY41 1/20 0.31
CA1 P00915 1/20 0.31
CA2 P00918 1/20 0.31
CA7 P43166 1/20 0.31
CA14 Q9ULX7 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27921367 0.95 CA4 (0.43) CA4FFAR3HDAC3HDAC1HDAC2
SCHEMBL17433619 0.95 CA4 (0.43) CA4FFAR3HDAC3HDAC1HDAC2
SCHEMBL17433558 0.95 CA4 (0.43) CA4FFAR3HDAC3HDAC1HDAC2
SCHEMBL15758267 0.95 CA4 (0.43) CA4FFAR3HDAC3HDAC1HDAC2
SCHEMBL17433554 0.95 CA4 (0.43) CA4FFAR3HDAC3HDAC1HDAC2
SCHEMBL5702370 0.95 CA4 (0.43) CA4FFAR3HDAC3HDAC1HDAC2
SCHEMBL17433569 0.95 CA4 (0.43) CA4FFAR3HDAC3HDAC1HDAC2
SCHEMBL16632930 0.95 CA4 (0.43) CA4FFAR3HDAC3HDAC1HDAC2
SCHEMBL21097459 0.91 CA4 (0.36) CA4CA1CA2
SCHEMBL28255512 0.89 CA4 (0.38) CA4FFAR3HDAC3HDAC1HDAC2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109716491-B Method for manufacturing field effect transistor and method for manufacturing wireless communication device 东丽株式会社 2023-06-09 CN disclosed
EP-3514822-B1 METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES (JP) 2023-04-26 EP disclosed
US-11094899-B2 Method for manufacturing field effect transistor and method for manufacturing wireless communication device TORAY INDUSTRIES, INC. 2021-08-17 US disclosed
EP-3367402-B1 CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME TORAY INDUSTRIES (JP) 2021-07-07 EP disclosed
CN-107431096-B Rectifier element, method for manufacturing the same, and wireless communication device 东丽株式会社 2021-01-15 CN disclosed
US-10636866-B2 Capacitor, method for manufacturing same, and wireless communication device using same TORAY INDUSTRIES, INC. (JP) 2020-04-28 US disclosed
US-10490748-B2 Rectifying element, method for producing same, and wireless communication device TORAY INDUSTRIES, INC. (JP) 2019-11-26 US disclosed
EP-3514822-A1 METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE Toray Industries, Inc. (JP) 2019-07-24 EP disclosed
US-20190198786-A1 METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES, INC. (JP) 2019-06-27 US disclosed
CN-105190901-B Field effect transistor 东丽株式会社 2018-12-04 CN disclosed
US-20180277619-A1 CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME TORAY INDUSTRIES, INC. (JP) 2018-09-27 US disclosed
EP-3367402-A1 CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME Toray Industries, Inc. (JP) 2018-08-29 EP disclosed
US-20180026197-A1 RECTIFYING ELEMENT, METHOD FOR PRODUCING SAME, AND WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES, INC. (JP) 2018-01-25 US disclosed
US-20160035457-A1 FIELD EFFECT TRANSISTOR TORAY INDUSTRIES, INC. (JP) 2016-02-04 US disclosed
EP-2975649-A1 FIELD EFFECT TRANSISTOR Toray Industries, Inc. (JP) 2016-01-20 EP disclosed
CN-105190901-A Field effect transistor TORAY INDUSTRIES 2015-12-23 CN disclosed