SCHEMBL17433573

SCHEMBL17433573

CCC(CC)(C(=O)[O-])C(=O)[O-].CCC(CC)(C(=O)[O-])C(=O)[O-].CCC(CC)(C(=O)[O-])C(=O)[O-].[In+3].[In+3]

nearest known ligand 0.42

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
FFAR3 O14843 3/20 0.36
HDAC3 O15379 2/20 0.36
HDAC1 Q13547 2/20 0.36
HDAC2 Q92769 2/20 0.36
HDAC8 Q9BY41 2/20 0.36
CA1 P00915 3/20 0.33
CES2 O00748 2/20 0.33
CES1 P23141 2/20 0.33
CYP3A4 P08684 2/20 0.32
TSHR P16473 2/20 0.32
NFKB1 P19838 2/20 0.32
NPSR1 Q6W5P4 2/20 0.32
CA4 P22748 1/20 0.32
BBOX1 O75936 1/20 0.31
ALDH1A1 P00352 1/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6961753 0.94 FFAR3 (0.36) FFAR3HDAC3HDAC1HDAC2HDAC8
SCHEMBL17818654 0.94 FFAR3 (0.36) FFAR3HDAC3HDAC1HDAC2HDAC8
Lithium Ion SCHEMBL107373 0.94 FFAR3 (0.36) FFAR3HDAC3HDAC1HDAC2HDAC8
Zinc Ion SCHEMBL17459894 0.94 FFAR3 (0.36) FFAR3HDAC3HDAC1HDAC2HDAC8
SCHEMBL17433672 0.94 FFAR3 (0.36) FFAR3HDAC3HDAC1HDAC2HDAC8
SCHEMBL17433623 0.94 FFAR3 (0.36) FFAR3HDAC3HDAC1HDAC2HDAC8
SCHEMBL21269015 0.94 FFAR3 (0.36) FFAR3HDAC3HDAC1HDAC2HDAC8
SCHEMBL21247500 0.94 FFAR3 (0.36) FFAR3HDAC3HDAC1HDAC2HDAC8
SCHEMBL21269349 0.94 FFAR3 (0.36) FFAR3HDAC3HDAC1HDAC2HDAC8
Potassium Ion SCHEMBL104872 0.94 CA4 (0.37) FFAR3HDAC3HDAC1HDAC2HDAC8

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109716491-B Method for manufacturing field effect transistor and method for manufacturing wireless communication device 东丽株式会社 2023-06-09 CN disclosed
EP-3514822-B1 METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES (JP) 2023-04-26 EP disclosed
US-11094899-B2 Method for manufacturing field effect transistor and method for manufacturing wireless communication device TORAY INDUSTRIES, INC. 2021-08-17 US disclosed
EP-3367402-B1 CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME TORAY INDUSTRIES (JP) 2021-07-07 EP disclosed
US-10636866-B2 Capacitor, method for manufacturing same, and wireless communication device using same TORAY INDUSTRIES, INC. (JP) 2020-04-28 US disclosed
US-10490748-B2 Rectifying element, method for producing same, and wireless communication device TORAY INDUSTRIES, INC. (JP) 2019-11-26 US disclosed
EP-3514822-A1 METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE Toray Industries, Inc. (JP) 2019-07-24 EP disclosed
US-20190198786-A1 METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES, INC. (JP) 2019-06-27 US disclosed
US-20180277619-A1 CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME TORAY INDUSTRIES, INC. (JP) 2018-09-27 US disclosed
EP-3367402-A1 CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME Toray Industries, Inc. (JP) 2018-08-29 EP disclosed
US-20180026197-A1 RECTIFYING ELEMENT, METHOD FOR PRODUCING SAME, AND WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES, INC. (JP) 2018-01-25 US disclosed
US-20160035457-A1 FIELD EFFECT TRANSISTOR TORAY INDUSTRIES, INC. (JP) 2016-02-04 US disclosed
EP-2975649-A1 FIELD EFFECT TRANSISTOR Toray Industries, Inc. (JP) 2016-01-20 EP disclosed
CN-105190901-A Field effect transistor TORAY INDUSTRIES 2015-12-23 CN disclosed