SCHEMBL17433606

SCHEMBL17433606

CC(C)O[In+2].CCC(=O)CC(=O)[O-].CCC(=O)CC(=O)[O-]

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA4 P22748 2/20 0.36
TDP1 Q9NUW8 2/20 0.36
CA2 P00918 1/20 0.33
CA1 P00915 2/20 0.32
ALDH1A1 P00352 2/20 0.31
FFAR3 O14843 2/20 0.31
HDAC3 O15379 2/20 0.31
HDAC1 Q13547 2/20 0.31
HDAC2 Q92769 2/20 0.31
HDAC8 Q9BY41 2/20 0.31
LMNA P02545 1/20 0.31
HSD17B10 Q99714 1/20 0.31
TSHR P16473 1/20 0.31
MGAM O43451 1/20 0.30
GAA P10253 1/20 0.30
SI P14410 1/20 0.30
MGAM2 Q2M2H8 1/20 0.30
MEN1 O00255 1/20 0.30
CYP2C19 P33261 1/20 0.30
RECQL P46063 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17477089 0.87 CA4 (0.39) CA4TDP1CA1FFAR3HDAC3
SCHEMBL1361565 0.85 CA4 (0.38) CA4TDP1CA2CA1FFAR3
SCHEMBL17477080 0.83 CA4 (0.36) CA4TDP1CA2CA1FFAR3
SCHEMBL31474548 0.83 CA4 (0.36) CA4TDP1CA2CA1FFAR3
SCHEMBL8700120 0.83 CA4 (0.36) CA4TDP1CA2CA1FFAR3
SCHEMBL30534807 0.80 CA4 (0.41) CA4TDP1CA2CA1FFAR3
SCHEMBL29652619 0.80 CA4 (0.41) CA4TDP1CA2CA1FFAR3
SCHEMBL27642447 0.80 CA4 (0.41) CA4TDP1CA2CA1FFAR3
SCHEMBL17433585 0.80 CA4 (0.41) CA4TDP1CA1ALDH1A1FFAR3
SCHEMBL422281 0.80 CA4 (0.41) CA4TDP1CA2CA1FFAR3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3514822-B1 METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES (JP) 2023-04-26 EP disclosed
US-11094899-B2 Method for manufacturing field effect transistor and method for manufacturing wireless communication device TORAY INDUSTRIES, INC. 2021-08-17 US disclosed
EP-3367402-B1 CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME TORAY INDUSTRIES (JP) 2021-07-07 EP disclosed
US-10636866-B2 Capacitor, method for manufacturing same, and wireless communication device using same TORAY INDUSTRIES, INC. (JP) 2020-04-28 US disclosed
US-10490748-B2 Rectifying element, method for producing same, and wireless communication device TORAY INDUSTRIES, INC. (JP) 2019-11-26 US disclosed
EP-3514822-A1 METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE Toray Industries, Inc. (JP) 2019-07-24 EP disclosed
US-20190198786-A1 METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES, INC. (JP) 2019-06-27 US disclosed
US-20180277619-A1 CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME TORAY INDUSTRIES, INC. (JP) 2018-09-27 US disclosed
EP-3367402-A1 CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME Toray Industries, Inc. (JP) 2018-08-29 EP disclosed
US-20180026197-A1 RECTIFYING ELEMENT, METHOD FOR PRODUCING SAME, AND WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES, INC. (JP) 2018-01-25 US disclosed
US-20160035457-A1 FIELD EFFECT TRANSISTOR TORAY INDUSTRIES, INC. (JP) 2016-02-04 US disclosed
EP-2975649-A1 FIELD EFFECT TRANSISTOR Toray Industries, Inc. (JP) 2016-01-20 EP disclosed