SCHEMBL17433673

SCHEMBL17433673

CC(=O)CC(=O)OC(C)C.CC(=O)CC(=O)OC(C)C.CC(=O)CC(=O)OC(C)C.[InH3]

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MGAM O43451 1/20 0.52
GAA P10253 1/20 0.52
SI P14410 1/20 0.52
MGAM2 Q2M2H8 1/20 0.52
TSHR P16473 3/20 0.48
LMNA P02545 2/20 0.43
SMN1; SMN2 Q16637 1/20 0.37
ALDH1A1 P00352 2/20 0.36
TDP1 Q9NUW8 1/20 0.36
MAPT P10636 2/20 0.36
CYP2D6 P10635 1/20 0.35
HTT P42858 2/20 0.33
PPARG P37231 1/20 0.33
NCOA2 Q15596 1/20 0.33
NCOA1 Q15788 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33
RXFP1 Q9HBX9 1/20 0.33
NCOA3 Q9Y6Q9 1/20 0.33
HCAR2 Q8TDS4 1/20 0.33
CHRM2 P08172 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20481946 1.00 MGAM (0.52) MGAMGAASIMGAM2TSHR
SCHEMBL29438274 0.97 MGAM (0.55) MGAMGAASIMGAM2TSHR
SCHEMBL182320 0.97 MGAM (0.55) MGAMGAASIMGAM2TSHR
SCHEMBL17433665 0.95 MGAM (0.52) MGAMGAASIMGAM2TSHR
SCHEMBL20477578 0.95 MGAM (0.52) MGAMGAASIMGAM2TSHR
SCHEMBL20477581 0.95 MGAM (0.52) MGAMGAASIMGAM2TSHR
SCHEMBL20482195 0.95 MGAM (0.52) MGAMGAASIMGAM2TSHR
SCHEMBL7134829 0.95 MGAM (0.52) MGAMGAASIMGAM2TSHR
SCHEMBL17433603 0.95 MGAM (0.52) MGAMGAASIMGAM2TSHR
SCHEMBL29010307 0.95 MGAM (0.52) MGAMGAASIMGAM2TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3514822-B1 METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES (JP) 2023-04-26 EP disclosed
US-11094899-B2 Method for manufacturing field effect transistor and method for manufacturing wireless communication device TORAY INDUSTRIES, INC. 2021-08-17 US disclosed
EP-3367402-B1 CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME TORAY INDUSTRIES (JP) 2021-07-07 EP disclosed
US-10636866-B2 Capacitor, method for manufacturing same, and wireless communication device using same TORAY INDUSTRIES, INC. (JP) 2020-04-28 US disclosed
US-10490748-B2 Rectifying element, method for producing same, and wireless communication device TORAY INDUSTRIES, INC. (JP) 2019-11-26 US disclosed
EP-3514822-A1 METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE Toray Industries, Inc. (JP) 2019-07-24 EP disclosed
US-20190198786-A1 METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES, INC. (JP) 2019-06-27 US disclosed
US-20180277619-A1 CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME TORAY INDUSTRIES, INC. (JP) 2018-09-27 US disclosed
EP-3367402-A1 CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME Toray Industries, Inc. (JP) 2018-08-29 EP disclosed
US-20180026197-A1 RECTIFYING ELEMENT, METHOD FOR PRODUCING SAME, AND WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES, INC. (JP) 2018-01-25 US disclosed
US-20160035457-A1 FIELD EFFECT TRANSISTOR TORAY INDUSTRIES, INC. (JP) 2016-02-04 US disclosed
EP-2975649-A1 FIELD EFFECT TRANSISTOR Toray Industries, Inc. (JP) 2016-01-20 EP disclosed