⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Phosphine SCHEMBL14991435 | 1.00 | — | — | |
| Phosphine SCHEMBL8731728 | 1.00 | — | — | |
| Phosphine SCHEMBL25270879 | 0.82 | — | — | |
| Phosphine SCHEMBL6664383 | 0.82 | — | — | |
| Methane SCHEMBL29205041 | 0.82 | — | — | |
| Phosphine SCHEMBL735540 | 0.82 | — | — | |
| Phosphine SCHEMBL10953742 | 0.82 | — | — | |
| Phosphine SCHEMBL15845043 | 0.82 | — | — | |
| Phosphine SCHEMBL9774053 | 0.82 | — | — | |
| Phosphine SCHEMBL28579138 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 3048 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4704155-A1 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS | Sony Semiconductor Solutions Corporation (JP) | 2026-03-04 | — | — | EP | claimed |
| US-20250337214-A1 | SEMICONDUCTOR LASER PACKAGES AND MODULES | Anhui GaN Semiconductor Co., Ltd. (CN) | 2025-10-30 | — | — | US | claimed |
| US-20250218859-A1 | SEMICONDUCTOR DEVICE WITH CATALYTIC CONDUCTIVE LAYER AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2025-07-03 | — | — | US | claimed |
| US-20250218791-A1 | SEMICONDUCTOR DEVICE WITH CATALYTIC CONDUCTIVE LAYER AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2025-07-03 | — | — | US | claimed |
| US-20250218861-A1 | SEMICONDUCTOR DEVICE WITH CATALYTIC CONDUCTIVE LAYER AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2025-07-03 | — | — | US | claimed |
| CN-119921184-A | Tunnel junction cascading multiple active region distributed feedback semiconductor laser and manufacturing method thereof | 华侨大学 | 2025-05-02 | — | — | CN | claimed |
| CN-119894126-A | InGaAsP Geiger avalanche diode and preparation method thereof | 西南技术物理研究所 | 2025-04-25 | — | — | CN | claimed |
| CN-119108891-B | Cutting path processing method | 度亘核芯光电技术(苏州)有限公司 | 2025-04-08 | — | — | CN | claimed |
| US-12255220-B2 | Light receiving element and electronic apparatus | SONY SEMICONDUCTOR SOLUTIONS CORPORATION (JP) | 2025-03-18 | — | — | US | claimed |
| EP-3584821-B1 | COMPOUND SEMICONDUCTOR LAMINATE SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR ELEMENT | SHINETSU CHEMICAL CO (JP) | 2025-03-12 | — | — | EP | claimed |
| CN-1383218-A | Process for preparing plarization controllable photoelectric device | SEMICONDUCTOR INST CN ACAD (CN) | 2002-12-04 | — | — | CN | claimed |
| CN-1377060-A | Process for preparing SiO2 medium film on micron-class strip mesa | FUCHUANGGUANG ELECTRONIC CO LT (CN) | 2002-10-30 | — | — | CN | claimed |
| US-20010045995-A1 | LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THERFOR | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 2001-11-29 | — | — | US | claimed |
| EP-0752743-B1 | Laser device with buried structure for integrated photonic circuit and method of fabrication | FRANCE TELECOM (FR) | 2001-06-06 | — | — | EP | claimed |
| EP-1096578-A2 | Solid-state excimer devices and processes for producing same | Okada, Fumio (JP) | 2001-05-02 | — | — | EP | claimed |
| CN-1192587-A | Field effect transistor | MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) | 1998-09-09 | — | — | CN | claimed |
| CN-1034251-C | Transverse GalnAs photoelectric transistor and its integrating technique | SEMICONDUCTOR INST CN ACAD (CN) | 1997-03-12 | — | — | CN | claimed |
| US-5445692-A | Process for reinforcing a semiconductor wafer | SUMITOMO ELECTRIC INDUSTRIES, LTD. (JP) | 1995-08-29 | — | — | US | claimed |
| CN-1094188-A | GalnAs (GaInAs) lateral light electric transistor and integrated technology thereof | SEMICONDUCTOR INST CN ACAD (CN) | 1994-10-26 | — | — | CN | claimed |
| US-4394237-A | Spectroscopic monitoring of gas-solid processes | BELL TELEPHONE LABORATORIES, INCORPORATED (US) | 1983-07-19 | — | — | US | claimed |