SCHEMBL17835294

SCHEMBL17835294

OC1(C(F)(F)F)CCCO1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18826114 0.93
SCHEMBL14204576 0.69
SCHEMBL14204570 0.67
SCHEMBL21198746 0.67
SCHEMBL4978740 0.65
SCHEMBL20869656 0.65
SCHEMBL30000700 0.64 MEN1 (0.35)
SCHEMBL27766768 0.64 KMT2A (0.30)
SCHEMBL465402 0.64
SCHEMBL23575974 0.63 MEN1 (0.34)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12275693-B2 Onium salt, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-04-15 US disclosed
US-11548844-B2 Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-01-10 US disclosed
US-11492337-B2 Epoxy compound, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-11-08 US disclosed
CN-110526802-B Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming method 信越化学工业株式会社 2022-09-20 CN disclosed
US-11009793-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-05-18 US disclosed
EP-3572876-B1 MONOMER, POLYMER, NEGATIVE RESIST COMPOSITION, PHOTOMASK BLANK, AND RESIST PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2021-04-14 EP disclosed
US-20200369605-A1 ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-11-26 US disclosed
CN-105717744-B Monomer, polymer, resist composition and patterning method 信越化学工业株式会社 2020-10-23 CN disclosed
US-20200283400-A1 EPOXY COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-09-10 US disclosed
US-10591819-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-03-17 US disclosed
US-9790166-B2 Polymer, monomer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-17 US disclosed
US-9758609-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
EP-3205640-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2017-08-16 EP disclosed
US-20170226252-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-10 US disclosed
EP-3168207-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2017-05-17 EP disclosed
US-20170131635-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-11 US disclosed
US-20160342086-A1 POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-24 US disclosed
CN-105717744-A Monomer, Polymer, Resist Composition, And Patterning Process 信越化学工业株式会社 2016-06-29 CN disclosed
US-20160179002-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-23 US disclosed
EP-3035121-A2 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2016-06-22 EP disclosed