Ethylene

Ethylene

SCHEMBL1795635

C=C.C=C.C=C.N.N.[F-].[H+]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Ethylene SCHEMBL9810762 0.80
Ethylene SCHEMBL2465282 0.80
Ethylene SCHEMBL1952662 0.78
Ethylene SCHEMBL5144595 0.78
Ethylene SCHEMBL15121 0.78
Ethylene SCHEMBL3135482 0.78
Ethylene SCHEMBL42885 0.78
Ethylene SCHEMBL105475 0.78
Ethylene SCHEMBL526684 0.78
Ethylene SCHEMBL8567644 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7943516-B2 Manufacturing method for semiconductor device RENESAS ELECTRONICS CORPORATION (JP) 2011-05-17 US disclosed
US-20080214002-A1 Cleaning solution and manufacturing method for semiconductor device NEC ELETRONICS CORPORATION (JP) 2008-09-04 US disclosed
US-7368064-B2 Hydrofluoric acid, ammonium fluoride, or amine fluoride; chelating agent (ammonium malonate, glycolate, tartrate or citrate); carboxylic ammonium salt having acid dissociation constant pKan of 2.5 or greater at 25 degrees C.; water; for cleaning a substrate on which a nickel silicide layer is formed NEC ELECTRONICS CORPORATION (JP) 2008-05-06 US disclosed
CN-1322105-C Cleaning solution and manufacturing method for semiconductor device NEC ELECTRONICS CORP (JP) 2007-06-20 CN disclosed
CN-1690183-A Cleaning solution and manufacturing method for semiconductor device NEC ELECTRONICS CORP (JP) 2005-11-02 CN disclosed
US-20050236362-A1 Cleaning solution and manufacturing method for semiconductor device NEC ELECTRONICS CORPORATION (JP) 2005-10-27 US disclosed