⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL29086302 | 0.93 | — | — | |
| Hydrochloric Acid SCHEMBL8473274 | 0.93 | — | — | |
| Hydrochloric Acid SCHEMBL27405321 | 0.93 | — | — | |
| SCHEMBL1232240 | 0.72 | — | — | |
| Propane SCHEMBL27589716 | 0.67 | — | — | |
| SCHEMBL179721 | 0.67 | — | — | |
| Propane SCHEMBL28115266 | 0.67 | — | — | |
| Propane SCHEMBL27638398 | 0.67 | — | — | |
| Butane SCHEMBL20262953 | 0.62 | — | — | |
| Butane SCHEMBL19031763 | 0.62 | TSHR (0.40) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 167 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115763645-B | Light-emitting diode for improving luminous efficiency and preparation method thereof | 京东方华灿光电(苏州)有限公司 | 2025-05-06 | — | — | CN | claimed |
| EP-3898887-B1 | METHODS FOR SYNTHESIS OF INORGANIC NANOSTRUCTURES USING MOLTEN SALT CHEMISTRY | SHOEI CHEMICAL IND CO (JP) | 2024-12-18 | — | — | EP | claimed |
| CN-113646403-B | Method for chemically synthesizing inorganic nano structure by using molten salt | 昭荣化学工业株式会社 | 2024-08-27 | — | — | CN | claimed |
| CN-115763645-A | Light emitting diode with improved luminous efficiency and preparation method thereof | 华灿光电(苏州）有限公司 | 2023-03-07 | — | — | CN | claimed |
| CN-113646403-A | Method for chemical synthesis of inorganic nanostructures using molten salts | 纳米系统公司 | 2021-11-12 | — | — | CN | claimed |
| EP-3898887-A1 | METHODS FOR SYNTHESIS OF INORGANIC NANOSTRUCTURES USING MOLTEN SALT CHEMISTRY | Nanosys, Inc. (US) | 2021-10-27 | — | — | EP | claimed |
| CN-110670135-B | Gallium nitride single crystal material and preparation method thereof | 中国科学院福建物质结构研究所 | 2021-03-05 | — | — | CN | claimed |
| WO-2020163075-A1 | METHODS FOR SYNTHESIS OF INORGANIC NANOSTRUCTURES USING MOLTEN SALT CHEMISTRY | NANOSYS, INC. (US) | 2020-08-13 | — | — | WO | claimed |
| CN-110670135-A | Gallium nitride single crystal material and preparation method thereof | 中国科学院福建物质结构研究所 | 2020-01-10 | — | — | CN | claimed |
| CN-109830578-A | A kind of growing method of LED epitaxial structure | 湘能华磊光电股份有限公司 | 2019-05-31 | — | — | CN | claimed |
| CN-208634793-U | The collection device of triethyl-gallium | 江苏南大光电材料股份有限公司 | 2019-03-22 | — | — | CN | claimed |
| CN-109346580-A | A kind of manufacturing method of LED epitaxial slice | 华灿光电（浙江）有限公司 | 2019-02-15 | — | — | CN | claimed |
| CN-109300853-A | A kind of novel light-emitting diode Quantum Well and preparation method thereof | 淮安澳洋顺昌光电技术有限公司 | 2019-02-01 | — | — | CN | claimed |
| CN-108644612-A | The collection device and its method of triethyl-gallium | 江苏南大光电材料股份有限公司 | 2018-10-12 | — | — | CN | claimed |
| CN-107039250-B | A kind of method of the material of growing gallium nitride on a sapphire substrate, gallium nitride material and application thereof | 中晟光电设备（上海）股份有限公司 | 2018-08-21 | — | — | CN | claimed |
| CN-103811601-B | A kind of GaN base LED multi-level buffer layer growth method with Sapphire Substrate as substrate | 合肥彩虹蓝光科技有限公司 | 2016-08-17 | — | — | CN | claimed |
| CN-105870289-A | AlGaInP-based LED chip with zinc oxide-based transparent electrode structure and manufacturing method of AlGaInP-based LED chip | 中山大学 | 2016-08-17 | — | — | CN | claimed |
| WO-2013019521-A1 | METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES | AVOGY, INC. (US) | 2013-02-07 | — | — | WO | claimed |
| US-20080233721-A1 | METHOD FOR FORMING AlGaN CRYSTAL LAYER | NGK INSULATORS, LTD. (JP) | 2008-09-25 | — | — | US | claimed |
| US-4800189-A | SEMICONDUCTOR INDUSTRY | MESSER GRIESHEIM GMBH (DE) | 1989-01-24 | — | — | US | claimed |