SCHEMBL17972902

SCHEMBL17972902

[Gd+3].[La+3].[O-2].[O-2].[O-2]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11304672 0.87
SCHEMBL7848623 0.87
SCHEMBL7648855 0.82
SCHEMBL7543167 0.82
SCHEMBL31207125 0.82
SCHEMBL7544100 0.82
SCHEMBL3200976 0.82
SCHEMBL11676053 0.82
SCHEMBL36463 0.82
SCHEMBL30066882 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119481151-A Self-heating starting solid oxide fuel cell stack and self-heating starting method 广东能源集团科学技术研究院有限公司 2025-02-18 CN claimed
CN-108962725-B Dielectric film with high dielectric constant and structural property and preparation method thereof 美国麦可松科技有限公司 2022-10-18 CN claimed
US-9768020-B2 Low defect relaxed SiGe/strained Si structures on implant anneal buffer/strain relaxed buffer layers with epitaxial rare earth oxide interlayers and methods to fabricate same INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2017-09-19 US claimed
US-9685328-B2 Low defect relaxed SiGe/strained Si structures on implant anneal buffer/strain relaxed buffer layers with epitaxial rare earth oxide interlayers and methods to fabricate same INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2017-06-20 US claimed
US-9613803-B2 Low defect relaxed SiGe/strained Si structures on implant anneal buffer/strain relaxed buffer layers with epitaxial rare earth oxide interlayers and methods to fabricate same INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2017-04-04 US claimed
US-20170011920-A1 LOW DEFECT RELAXED SiGe/STRAINED Si STRUCTURES ON IMPLANT ANNEAL BUFFER/STRAIN RELAXED BUFFER LAYERS WITH EPITAXIAL RARE EARTH OXIDE INTERLAYERS AND METHODS TO FABRICATE SAME INTERNATIONAL BUSINESS MACHINES CORPORATION 2017-01-12 US claimed
US-20160322221-A1 Low Defect Relaxed SiGe/Strained Si Structures on Implant Anneal Buffer/Strain Relaxed Buffer Layers with Epitaxial Rare Earth Oxide Interlayers and Methods to Fabricate Same INTERNATIONAL BUSINESS MACHINES CORPORATION 2016-11-03 US claimed
US-20160322220-A1 LOW DEFECT RELAXED SiGe/STRAINED Si STRUCTURES ON IMPLANT ANNEAL BUFFER/STRAIN RELAXED BUFFER LAYERS WITH EPITAXIAL RARE EARTH OXIDE INTERLAYERS AND METHODS TO FABRICATE SAME INTERNATIONAL BUSINESS MACHINES CORPORATION 2016-11-03 US claimed
US-9419079-B1 Low defect relaxed SiGe/strained Si structures on implant anneal buffer/strain relaxed buffer layers with epitaxial rare earth oxide interlayers and methods to fabricate same INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2016-08-16 US claimed
CN-120399393-B Friction material, brake pad and preparation method of brake pad 杭州优纳摩擦材料有限公司 2026-04-10 CN disclosed
CN-120402552-B Composite material for brake pad and preparation method thereof 杭州优纳摩擦材料有限公司 2025-11-21 CN disclosed
CN-120545421-B High-temperature SOFC electric pile double-layer electrolyte-cathode coating component and preparation method thereof 成都烁克科技有限公司 2025-09-16 CN disclosed
CN-120545421-A High-temperature SOFC electric pile double-layer electrolyte-cathode coating component and preparation method thereof 成都烁克科技有限公司 2025-08-26 CN disclosed
CN-120402552-A Composite material for brake pad and preparation method thereof 杭州优纳摩擦材料有限公司 2025-08-01 CN disclosed
CN-120399393-A Friction material, brake pad and preparation method of brake pad 杭州优纳摩擦材料有限公司 2025-08-01 CN disclosed
CN-119707526-A Multi-temperature zone annealing method for sulfur oxide scintillating ceramic 清远先导材料有限公司 2025-03-28 CN disclosed
CN-117550904-A Rare earth oxide modified fly ash low-heat-conductivity grouting material and preparation method and application thereof 包头市安德窑炉科技有限公司 2024-02-13 CN disclosed
CN-108962725-B Dielectric film with high dielectric constant and structural property and preparation method thereof 美国麦可松科技有限公司 2022-10-18 CN disclosed
US-9565375-B1 Pixel and an array of pixels STMICROELECTRONICS (GRENOBLE 2) SAS (FR) 2017-02-07 US disclosed