SCHEMBL180230

SCHEMBL180230

[Cd].[MgH2]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28943634 0.82
Water SCHEMBL29035054 0.82
SCHEMBL301138 0.82
SCHEMBL19972065 0.82
SCHEMBL20580660 0.82
SCHEMBL8599656 0.82
SCHEMBL11416130 0.82
Hydrogen Sulfide SCHEMBL992399 0.82
SCHEMBL21531439 0.82
SCHEMBL8208037 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 467 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117832333-B Cadmium telluride thin film battery and preparation method thereof 龙焱能源科技(杭州)有限公司 2024-05-31 CN claimed
CN-117832333-A Cadmium telluride thin film battery and preparation method thereof 龙焱能源科技(杭州)有限公司 2024-04-05 CN claimed
EP-3726258-B1 IMAGING METHOD AND SYSTEM DETECTION TECH OYJ (FI) 2023-10-04 EP claimed
US-11733183-B2 Imaging method and system DETECTION TECHNOLOGY OYJ (FI) 2023-08-22 US claimed
US-20220196579-A1 IMAGING METHOD AND SYSTEM DETECTION TECH OYJ (FI) 2022-06-23 US claimed
CN-113785224-A Imaging method and system 检测技术公司 2021-12-10 CN claimed
US-11158557-B2 Semiconductor device with a passivation layer and method for producing thereof INFINEON TECHNOLOGIES AG (DE) 2021-10-26 US claimed
CN-214251047-U High temperature resistant detection device 俞长勇 2021-09-21 CN claimed
CN-107278323-B Method of epitaxial growth of a material interface between a III-V material and a silicon wafer providing compensation of residual strain 集成太阳能公司 2021-02-12 CN claimed
CN-108624949-B Preparation method of tellurium-magnesium-cadmium single crystal material, single crystal material and application thereof 长安大学 2021-02-09 CN claimed
US-20110143489-A1 PROCESS FOR MAKING THIN FILM SOLAR CELL GENERAL ELECTRIC COMPANY (US) 2011-06-16 US claimed
EP-2333844-A2 Process of Making Thin Film Solar Cell General Electric Company (US) 2011-06-15 EP claimed
US-20110100447-A1 LAYER FOR THIN FILM PHOTOVOLTAICS AND A SOLAR CELL MADE THEREFROM GENERAL ELECTRIC COMPANY (US) 2011-05-05 US claimed
US-20100243056-A1 LAYER FOR THIN FILM PHOTOVOLTAICS AND A SOLAR CELL MADE THEREFROM GENERAL ELECTRIC COMPANY (US) 2010-09-30 US claimed
US-20100243039-A1 LAYER FOR THIN FILM PHOTOVOLTAICS AND A SOLAR CELL MADE THEREFROM GENERAL ELECTRIC COMPANY (US) 2010-09-30 US claimed
US-20100180935-A1 Multiple band gapped cadmium telluride photovoltaic devices and process for making the same AUCMOS Technologies USA, Inc. 2010-07-22 US claimed
US-20100055826-A1 Methods of Fabrication of Solar Cells Using High Power Pulsed Magnetron Sputtering GENERAL ELECTRIC COMPANY (US) 2010-03-04 US claimed
CN-100427928-C Nitrate and nitrite rapid testing paper and use thereof UNIV ZHEJIANG (CN) 2008-10-22 CN claimed
US-5322545-A Method of producing uranium metal BRITISH NUCLEAR FUELS, PLC (GB) 1994-06-21 US claimed
EP-0521608-A1 A method of producing uranium metal British Nuclear Fuels PLC (GB) 1993-01-07 EP claimed