Fluoride Ion

Fluoride Ion

SCHEMBL1802640

[F-].[F-].[F-].[Mg+2].[Rb+]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ATP4AATP4BGABBR1GABBR2HMGCR

The experimentally established mechanism targets of Fluoride Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Fluoride Ion SCHEMBL29201417 0.82
Fluoride Ion SCHEMBL4746079 0.82
Fluoride Ion SCHEMBL216793 0.82
Fluoride Ion SCHEMBL24361 0.82
Fluoride Ion SCHEMBL5392118 0.82
Fluoride Ion SCHEMBL3626675 0.67
Fluoride Ion SCHEMBL943505 0.67
Fluoride Ion SCHEMBL2240366 0.67
Water SCHEMBL3772662 0.67
Fluoride Ion SCHEMBL872263 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024253160-A1 TWO-LAYER FILM OF MAGNETIC BODY AND INSULATOR, TUNNEL MAGNETORESISTIVE ELEMENT, AND MAGNETIC MEMORY JSR株式会社 2024-12-12 WO claimed
US-8323995-B2 Diodes, and methods of forming diodes MICRON TECHNOLOGY, INC. (US) 2012-12-04 US claimed
US-20110201200-A1 Diodes, and Methods Of Forming Diodes MICRON TECHNOLOGY, INC. (US) 2011-08-18 US claimed
US-7951619-B2 Diodes, and methods of forming diodes MICRON TECHNOLOGY, INC. (US) 2011-05-31 US claimed
US-20100330770-A1 Diodes, And Methods Of Forming Diodes MICRON TECHNOLOGY, INC. (US) 2010-12-30 US claimed
US-7811840-B2 Diodes, and methods of forming diodes MICRON TECHNOLOGY, INC. (US) 2010-10-12 US claimed
WO-2009154886-A2 DIODES, AND METHODS OF FORMING DIODES MICRON TECHNOLOGY, INC. (US) 2009-12-23 WO claimed
US-20090294967-A1 Diodes, And Methods Of Forming Diodes MICRON SEMICONDUCTOR PRODUCTS, INC. 2009-12-03 US claimed
CN-117819825-B Rare earth Eu2+Doped fluoxyborate microcrystalline glass and preparation method thereof 中国科学院上海光学精密机械研究所 2025-05-13 CN disclosed
CN-110537110-B Suspension of sample elements with dimensional stability 赛默艾博林有限公司 2023-03-14 CN disclosed
EP-3615964-B1 SUSPENSION OF A SAMPLE ELEMENT WITH DIMENSIONAL STABILITY THERMO EBERLINE LLC (US) 2022-02-16 EP disclosed
CN-110537110-A The suspension of sample components with dimensional stability THERMO EBERLINE LLC 2019-12-03 CN disclosed
US-10466164-B2 Suspension of a sample element with dimensional stability THERMO EBERLINE LLC (US) 2019-11-05 US disclosed
US-20180306700-A1 SUSPENSION OF A SAMPLE ELEMENT WITH DIMENSIONAL STABILITY THERMO EBERLINE LLC 2018-10-25 US disclosed
US-20110201200-A1 Diodes, and Methods Of Forming Diodes MICRON TECHNOLOGY, INC. (US) 2011-08-18 US disclosed
US-7951619-B2 Diodes, and methods of forming diodes MICRON TECHNOLOGY, INC. (US) 2011-05-31 US disclosed
US-20100330770-A1 Diodes, And Methods Of Forming Diodes MICRON TECHNOLOGY, INC. (US) 2010-12-30 US disclosed
US-7811840-B2 Diodes, and methods of forming diodes MICRON TECHNOLOGY, INC. (US) 2010-10-12 US disclosed
WO-2009154886-A2 DIODES, AND METHODS OF FORMING DIODES MICRON TECHNOLOGY, INC. (US) 2009-12-23 WO disclosed
US-20090294967-A1 Diodes, And Methods Of Forming Diodes MICRON SEMICONDUCTOR PRODUCTS, INC. 2009-12-03 US disclosed