SCHEMBL1819746

SCHEMBL1819746

FC#CC(=C(F)F)C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1820432 0.79
SCHEMBL28685113 0.69
SCHEMBL1818439 0.67
SCHEMBL1820614 0.67
SCHEMBL1820617 0.63
SCHEMBL1820433 0.63
SCHEMBL27610991 0.62
SCHEMBL774747 0.60
SCHEMBL15271962 0.56
SCHEMBL11167473 0.56

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2317543-A2 Gas for plasma reaction, process for producing the same and use Zeon Corporation (JP) 2011-05-04 EP disclosed
US-7652179-B2 Gas for plasma reaction, process for producing the same, and use thereof ZEON CORPORATION (JP) 2010-01-26 US disclosed
US-20080139855-A1 Gas for plasma reaction, process for producing the same, and use thereof ZEON CORPORATION (JP) 2008-06-12 US disclosed
US-7341764-B2 Chemical vapor deposition using compound such as perfluoro-2-pentyne gas for plasma reaction to form fluorocarbon thin film, semiconductors ZEON CORPORATION (JP) 2008-03-11 US disclosed
CN-1669129-A Dry etching method, dry etching gas, and method for producing perfluoro-2-pentyne ZEON CORP (JP) 2005-09-14 CN disclosed
US-20050092240-A1 Gas for plasma reaction, process for producing the same, and use ZEON CORPORATION (JP) 2005-05-05 US disclosed
EP-1453082-A1 GAS FOR PLASMA REACTION&amp;comma; PROCESS FOR PRODUCING THE SAME&amp;comma; AND USE Zeon Corporation (JP) 2004-09-01 EP disclosed