SCHEMBL18227146

SCHEMBL18227146

[In+3].[O-]P([O-])([O-])=S

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29997898 0.94
SCHEMBL2638699 0.86
SCHEMBL2638694 0.86
SCHEMBL708051 0.86
SCHEMBL4599756 0.86
SCHEMBL3852808 0.86
SCHEMBL2278783 0.86
SCHEMBL3855818 0.86
SCHEMBL7715777 0.86
SCHEMBL20581663 0.86

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10563123-B2 CuInS2/In2S3/ZnS fluorescent quantum dot with double-layer core-shell structure and preparation method thereof GUANGZHOU INSTITUTE OF ENERGY CONVERSION, CHINESE ACADEMY OF SCIENCES (CN) 2020-02-18 US claimed
US-20180327662-A1 CuInS2/In2S3/ZnS Fluorescent Quantum Dot with Double-layer Core-shell Structure and Preparation Method Thereof GUANGZHOU INSTITUTE OF ENERGY CONVERSION, CHINESE ACADEMY OF SCIENCES (CN) 2018-11-15 US claimed
CN-114086237-B Preparation method of large-size two-dimensional layered metal thiophosphate crystal 华东交通大学 2023-09-22 CN disclosed
CN-114086237-B Preparation method of large-size two-dimensional layered metal thiophosphate crystal 华东交通大学 2023-09-22 CN disclosed
US-11761112-B2 Method for preparing large-size two-dimensional layered metal thiophosphate crystal EAST CHINA JIAOTONG UNIVERSITY (CN) 2023-09-19 US disclosed
US-20230160091-A1 METHOD FOR PREPARING LARGE-SIZE TWO-DIMENSIONAL LAYERED METAL THIOPHOSPHATE CRYSTAL EAST CHINA JIAOTONG UNIVERSITY (CN) 2023-05-25 US disclosed
CN-115692524-A Floating gate field effect transistor device and preparation method thereof 中国空间技术研究院 2023-02-03 CN disclosed
CN-115692524-A Floating gate field effect transistor device and preparation method thereof 中国空间技术研究院 2023-02-03 CN disclosed
CN-114086237-A Preparation method of large-size two-dimensional layered metal thiophosphate crystal 华东交通大学 2022-02-25 CN disclosed
CN-114086237-A Preparation method of large-size two-dimensional layered metal thiophosphate crystal 华东交通大学 2022-02-25 CN disclosed
US-10563123-B2 CuInS2/In2S3/ZnS fluorescent quantum dot with double-layer core-shell structure and preparation method thereof GUANGZHOU INSTITUTE OF ENERGY CONVERSION, CHINESE ACADEMY OF SCIENCES (CN) 2020-02-18 US disclosed
US-10563123-B2 CuInS2/In2S3/ZnS fluorescent quantum dot with double-layer core-shell structure and preparation method thereof GUANGZHOU INSTITUTE OF ENERGY CONVERSION, CHINESE ACADEMY OF SCIENCES (CN) 2020-02-18 US disclosed
US-20180327662-A1 CuInS2/In2S3/ZnS Fluorescent Quantum Dot with Double-layer Core-shell Structure and Preparation Method Thereof GUANGZHOU INSTITUTE OF ENERGY CONVERSION, CHINESE ACADEMY OF SCIENCES (CN) 2018-11-15 US disclosed
US-20180327662-A1 CuInS2/In2S3/ZnS Fluorescent Quantum Dot with Double-layer Core-shell Structure and Preparation Method Thereof GUANGZHOU INSTITUTE OF ENERGY CONVERSION, CHINESE ACADEMY OF SCIENCES (CN) 2018-11-15 US disclosed
WO-2016179920-A1 CuInS2/In2S3/ZnS FLUORESCENT QUANTUM DOT WITH DOUBLE-LAYER CORE-SHELL STRUCTURE AND PREPARATION METHOD THEREFOR 中国科学院广州能源研究所 2016-11-17 WO disclosed
CN-104861964-A CuInS2/In2S3/ZnS fluorescent quantum dot adopting double-layer core-shell structure and preparation method of CuInS2/In2S3/ZnS fluorescent quantum dot GUANGZHOU INST ENERGY CONV CAS 2015-08-26 CN disclosed