SCHEMBL1843152

SCHEMBL1843152

[GaH3].[Nd]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28017949 0.82
Water SCHEMBL27985002 0.82
SCHEMBL28926807 0.82
Water SCHEMBL7551857 0.82
SCHEMBL21751264 0.82
SCHEMBL9397323 0.82
SCHEMBL1208062 0.82
SCHEMBL28501803 0.82
SCHEMBL9616794 0.82
Hydrochloric Acid SCHEMBL27512576 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 98 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11573125-B2 Optical detector UNIVERSITY OF WYOMING (US) 2023-02-07 US claimed
US-20210055162-A1 OPTICAL DETECTOR UNIVERSITY OF WYOMING 2021-02-25 US claimed
US-9929338-B2 Spin current devices and methods of fabrication thereof THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 2018-03-27 US claimed
CN-104681268-B One kind improves the coercitive processing method of Sintered NdFeB magnet 湖南稀土金属材料研究院 2018-02-23 CN claimed
US-20170104150-A1 Spin Current Devices and Methods of Fabrication Thereof UNITED STATES DEPARTMENT OF ENERGY 2017-04-13 US claimed
CN-104681268-A Processing method for improving coercive force of sintered neodymium-iron-boron magnet HUNAN RARE EARTH METAL RES INST 2015-06-03 CN claimed
US-20090053558-A1 Article comprising a thick garnet film with negative growth-induced anisotropy INTEGRATED PHOTOTONICS, INC. 2009-02-26 US claimed
EP-1088914-B1 Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate SUMITOMO ELECTRIC INDUSTRIES (JP) 2007-02-28 EP claimed
US-20040080805-A1 Magneto-photonic crystal isolators MICHIGAN TECHNOLOGICAL UNIVERSITY 2004-04-29 US claimed
WO-2002069029-A1 MAGNETO-PHOTONIC CRYSTAL ISOLATORS BOARD OF CONTROL OF MICHIGAN TECHNOLOGICAL UNIVERSITY (US) 2002-09-06 WO claimed
EP-0409691-B1 Oxide garnet single crystal SHINETSU CHEMICAL CO (JP) 1995-10-18 EP claimed
US-5277845-A Oxide garnet single crystal SHIN-ETSU CHEMICAL CO., LTD. (JP) 1994-01-11 US claimed
EP-0330500-B1 Magneto-optic garnet MITSUBISHI GAS CHEMICAL CO (JP) 1993-10-27 EP claimed
US-4932760-A Faraday rotator used in an optical isolator, circulator, utilizing Faraday effect MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1990-06-12 US claimed
US-4893909-A RARE EARTH IRON GARNET U.S. PHILIPS CORP. (US) 1990-01-16 US claimed
EP-0330500-A2 Magneto-optic garnet MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1989-08-30 EP claimed
US-4770504-A BISMUTH SUBSTITUTED RARE EARTH METAL IRON GARNET, LEAD OXIDE AND BORON OXIDE FLUX U.S. PHILIPS CORP. (US) 1988-09-13 US claimed
US-4604577-A Temperature-compensated magnetic field measuring instrument HITACHI, LTD. (JP) 1986-08-05 US claimed
EP-0086387-B1 MEASURING INSTRUMENT OF MAGNETIC FIELD Hitachi, Ltd. (JP) 1986-04-30 EP claimed
EP-0086387-A1 Measuring instrument of magnetic field Hitachi, Ltd. (JP) 1983-08-24 EP claimed