SCHEMBL18628512

SCHEMBL18628512

O=[Sn].[SiH4].[Zn]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13278150 1.00
SCHEMBL2687915 0.89
SCHEMBL28202621 0.89
SCHEMBL31373850 0.89
SCHEMBL3613828 0.89
SCHEMBL50288 0.89
SCHEMBL16106137 0.89
SCHEMBL23151878 0.80
SCHEMBL5461931 0.80
SCHEMBL15400612 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 64 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11862743-B2 Opto-electronic device and image sensor including the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2024-01-02 US claimed
CN-111378453-B Etching liquid composition for simultaneously etching laminated film containing zinc oxide and silver 关东化学株式会社 2023-06-30 CN claimed
US-11670665-B2 Opto-electronic device having junction field-effect transistor structure and method of manufacturing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-06-06 US claimed
US-11646393-B2 Opto-electronic device and image sensor including the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-05-09 US claimed
EP-3863055-B1 OPTO-ELECTRONIC DEVICE HAVING JUNCTION FIELD-EFFECT TRANSISTOR STRUCTURE AND IMAGE SENSOR INCLUDING THE OPTO-ELECTRONIC DEVICE SAMSUNG ELECTRONICS CO LTD (KR) 2023-05-03 EP claimed
US-20220262968-A1 OPTO-ELECTRONIC DEVICE AND IMAGE SENSOR INCLUDING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2022-08-18 US claimed
US-11302740-B2 Opto-electronic device having junction field-effect transistor structure and image sensor including the opto-electronic device SAMSUNG ELECTRONICS CO., LTD. (KR) 2022-04-12 US claimed
CN-111799264-B Three-dimensional groove type ferroelectric memory and preparation method thereof 湘潭大学 2022-04-12 CN claimed
US-20210376161-A1 INVERTER EMPOLYING THIN-FILM TRASISTOR FABRICATED BY ADJUSTING SILICON CONTENT AND METHOD FOR MANUFACTURING SAME CHEONGJU UNIVERSITY INDUSTRY & ACADEMY COOPERATION FOUNDATION (KR) 2021-12-02 US claimed
US-20210376190-A1 OPTO-ELECTRONIC DEVICE AND IMAGE SENSOR INCLUDING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2021-12-02 US claimed
US-20210126159-A1 OPTOELECTRIC DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2021-04-29 US claimed
EP-3813128-A1 OPTOELECTRIC DEVICE Samsung Electronics Co., Ltd. (KR) 2021-04-28 EP claimed
CN-111799263-A Three-dimensional NAND ferroelectric memory and preparation method thereof 湘潭大学 2020-10-20 CN claimed
CN-111799264-A Three-dimensional groove type ferroelectric memory and preparation method thereof 湘潭大学 2020-10-20 CN claimed
CN-111378453-A Etching liquid composition for simultaneously etching laminated film containing zinc oxide and silver 关东化学株式会社 2020-07-07 CN claimed
EP-3144980-B1 PHOTOELECTRIC DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME SAMSUNG ELECTRONICS CO LTD (KR) 2020-05-20 EP claimed
US-9812596-B2 Photoelectric device and electronic apparatus including the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2017-11-07 US claimed
CN-107017312-A Photoelectric device and the electronic installation including the photoelectric device 三星电子株式会社 2017-08-04 CN claimed
US-20170084761-A1 PHOTOELECTRIC DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2017-03-23 US claimed
EP-3144980-A1 PHOTOELECTRIC DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME Samsung Electronics Co., Ltd. (KR) 2017-03-22 EP claimed