SCHEMBL1865322

SCHEMBL1865322

C=CC(=O)OC1COCC1O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28825673 0.82 TSHR (0.31)
SCHEMBL21165222 0.82
SCHEMBL824970 0.77
SCHEMBL14218439 0.77
SCHEMBL10392136 0.77 ABL1 (0.34)
SCHEMBL10392135 0.77 ABL1 (0.31)
SCHEMBL762566 0.75
SCHEMBL16060841 0.74 ATM (0.31)
SCHEMBL16060840 0.74 ATM (0.31)
SCHEMBL8544746 0.74 CHRM2 (0.37)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8338075-B2 Base component which exhibits increased solubility in an alkali developing solution under the action of acid, an acid generator, and organic solvent having a boiling point of at least 150 degrees C.; hole-like resist pattern can be formed with a high level of resolution and minute dimensions TOKYO OHKA KOGYO CO., LTD. (JP) 2012-12-25 US disclosed
US-7939243-B2 Resin, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-10 US disclosed
US-20100159389-A1 RESIN, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-06-24 US disclosed
US-20100047724-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-02-25 US disclosed