SCHEMBL1865517

SCHEMBL1865517

O=[Pb].[InH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28658182 0.89
SCHEMBL28919654 0.89
SCHEMBL28908237 0.89
SCHEMBL28105418 0.87
SCHEMBL24478 0.87
SCHEMBL5395626 0.76
SCHEMBL5398489 0.76
SCHEMBL5391306 0.76
SCHEMBL5394875 0.76
SCHEMBL5400896 0.76

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 60 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9608456-B2 Method for estimating the self-discharge of a lithium battery Commissariat à l'Energie Atomique et aux Energies Alternatives (FR) 2017-03-28 US claimed
CN-100499185-C High brightness LED element and its manufacturing method EPISTAR CORP (CN) 2009-06-10 CN claimed
CN-1758451-A High brightness LED element and its manufacturing method GUOLIAN PHOTOELECTRIC SCIENCE (CN) 2006-04-12 CN claimed
US-7012281-B2 Light emitting diode device and manufacturing method EPISTAR CORPORATION (TW) 2006-03-14 US claimed
US-20050093002-A1 Light emitting diode device and manufacturing method UNITED EPITAXY COMPANY, LTD. (TW) 2005-05-05 US claimed
US-6721026-B2 Structure of in-plane switching mode LCD with improved aperture ratio of pixel region and process for producing same HANNSTAR DISPLAY CORPORATION (TW) 2004-04-13 US claimed
US-6664149-B2 TFT-LCD formed with four masking steps HANNSTAR DISPLAY CORP. (TW) 2003-12-16 US claimed
US-20030134458-A1 TFT-LCD formed with four masking steps HANNSTAR DISPLAY CORP. (TW) 2003-07-17 US claimed
US-6509614-B1 TFT-LCD formed with four masking steps HANNSTAR DISPLAY CORP. (TW) 2003-01-21 US claimed
US-6448117-B1 Tri-layer process for forming TFT matrix of LCD with gate metal layer around pixel electrode as black matrix HANNSTAR DISPLAY CORP. (TW) 2002-09-10 US claimed
US-6436740-B1 Tri-layer process for forming TFT matrix of LCD with reduced masking steps HANNSTAR DISPLAY CORP. (TW) 2002-08-20 US claimed
US-6406928-B1 Back-channel-etch process for forming TFT matrix of LCD with reduced masking steps HANNSTAR DISPLAY CORP. (TW) 2002-06-18 US claimed
US-6387740-B1 Tri-layer process for forming TFT matrix of LCD with reduced masking steps HANNSTAR DISPLAY CORP. (TW) 2002-05-14 US claimed
US-6372560-B1 Simplified process for forming thin film transistor matrix for liquid crystal display HANNSTAR DISPLAY CORP. (TW) 2002-04-16 US claimed
US-20010040662-A1 Structure of in-plane switching mode LCD with improved aperture ratio of pixel region and process for producing same HANNSTAR DISPLAY CORPORATION (TW) 2001-11-15 US claimed
US-6274400-B1 Tri-layer process for forming TFT matrix of LCD with reduced masking steps HANNSTAR DISPLAY, INC. (TW) 2001-08-14 US claimed
JP-1006925-A None JP disclosed
CN-119547008-A Optical element and lighting device comprising same 株式会社日本显示器 2025-02-28 CN disclosed
US-5005062-A Image sensor device of the frame transfer type U.S. PHILIPS CORPORATION (US) 1991-04-02 US disclosed
JP-S646925-A LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURE THEREOF PHILIPS NV 1989-01-11 JP disclosed