SCHEMBL19130366

SCHEMBL19130366

CCO[Si](C[Si](CC)(OCC)C1CC2C=CC1C2)(OCC)OCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL200445 0.89 KDM4E (0.33)
SCHEMBL19131030 0.88
SCHEMBL19130364 0.80 KDM4E (0.30)
SCHEMBL19130382 0.80 KDM4E (0.30)
SCHEMBL6064399 0.80 KDM4E (0.32)
SCHEMBL5705805 0.77 KDM4E (0.34)
SCHEMBL6063481 0.77 KDM4E (0.34)
SCHEMBL18949955 0.75 KDM4E (0.35)
SCHEMBL122625 0.75 KDM4E (0.35)
SCHEMBL19130336 0.74 KDM4E (0.30)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170207083-A1 METHODS OF FORMING A LOW-K DIELECTRIC LAYER AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2017-07-20 US disclosed
US-20170207083-A1 METHODS OF FORMING A LOW-K DIELECTRIC LAYER AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2017-07-20 US disclosed