⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29548483 | 0.71 | — | — | |
| SCHEMBL23693 | 0.71 | — | — | |
| SCHEMBL30135586 | 0.71 | — | — | |
| SCHEMBL284956 | 0.71 | — | — | |
| SCHEMBL10773596 | 0.71 | — | — | |
| SCHEMBL29631432 | 0.71 | — | — | |
| SCHEMBL29394270 | 0.71 | — | — | |
| Ammonia Solution, Strong SCHEMBL28997679 | 0.71 | — | — | |
| SCHEMBL23906960 | 0.50 | — | — | |
| SCHEMBL25267911 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113584431-A | Mechanical element coated with an amorphous carbon layer for its slidability with respect to other less hard components | 流体力学与摩擦公司 | 2021-11-02 | — | — | CN | disclosed |
| CN-110214170-A | Integrated steam cracking, fluid catalytic cracking and conversion from naphthalene to the reformate rich in chemicals by converting crude oil at the method and system of petrochemical and fuel product | 沙特阿拉伯石油公司 | 2019-09-06 | — | — | CN | disclosed |
| US-9142683-B2 | Semiconductor device and manufacturing method thereof | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2015-09-22 | — | — | US | disclosed |
| US-20150076497-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | SEMICONDUCTOR ENERGY LAB (JP) | 2015-03-19 | — | — | US | disclosed |
| US-8889499-B2 | Semiconductor device and manufacturing method thereof | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2014-11-18 | — | — | US | disclosed |
| US-20140017860-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2014-01-16 | — | — | US | disclosed |
| US-8563976-B2 | Semiconductor device and manufacturing method thereof | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2013-10-22 | — | — | US | disclosed |
| US-20110140109-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2011-06-16 | — | — | US | disclosed |
| WO-2011070901-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2011-06-16 | — | — | WO | disclosed |