SCHEMBL196296

SCHEMBL196296

CC(O)CC(C)C(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13143414 1.00
SCHEMBL13404907 1.00
SCHEMBL11761728 0.84 TSHR (0.35)
SCHEMBL16889104 0.79
SCHEMBL16889102 0.79
SCHEMBL14764018 0.79
SCHEMBL16889103 0.79
SCHEMBL29233381 0.79
SCHEMBL16889108 0.79
SCHEMBL8042153 0.79

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 144 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12578648-B2 Rinsing liquid and pattern forming method FUJIFILM CORPORATION (JP) 2026-03-17 US disclosed
US-20250382724-A1 SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE PROCESSING METHOD, AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE PROCESSING SYSTEM TOKYO OHKA KOGYO CO LTD (JP) 2025-12-18 US disclosed
US-20250369155-A1 PROCESSING METHOD FOR SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE PROCESSING SYSTEM, AND REPLENISHING LIQUID TOKYO OHKA KOGYO CO LTD (JP) 2025-12-04 US disclosed
EP-3435158-B1 ACTIVE RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, METHOD FOR PURIFYING ACTIVE RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, PATTERN-FORMING METHOD, AND METHOD FOR PRODUCING ELECTRONIC DEVICE FUJIFILM CORP (JP) 2025-11-19 EP disclosed
US-12386265-B2 Pattern forming method and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2025-08-12 US disclosed
US-12306538-B2 Treatment liquid and pattern forming method FUJIFILM CORPORATION (JP) 2025-05-20 US disclosed
EP-4539106-A1 PROCESSING METHOD FOR SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE PROCESSING SYSTEM, AND REPLENISHING LIQUID TOKYO OHKA KOGYO CO., LTD. (JP) 2025-04-16 EP disclosed
EP-4539105-A1 SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE PROCESSING METHOD, AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE PROCESSING SYSTEM TOKYO OHKA KOGYO CO., LTD. (JP) 2025-04-16 EP disclosed
CN-115605517-B Compound, (co) polymer, composition, resist pattern forming method, and method for producing compound and (co) polymer 三菱瓦斯化学株式会社 2024-09-06 CN disclosed
US-20240295822-A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2024-09-05 US disclosed
US-7094516-B2 Benzobisazole compound and optical recording medium containing the compound MITSUI CHEMICALS, INC. (JP) 2006-08-22 US disclosed
EP-1672626-A1 OPTICAL RECORDING MEDIUM AND COMPOUND USED IN THE OPTICAL RECORDING MEDIUM Mitsui Chemicals, Inc. (JP) 2006-06-21 EP disclosed
US-20050208425-A1 Imide compound and optical recording media made by using the same YAMAMOTO CHEMICALS, INC. (JP) 2005-09-22 US disclosed
EP-1180765-B1 Optical recording medium and porphycene compound MITSUI CHEMICALS INC (JP) 2005-04-06 EP disclosed
EP-1445115-A1 IMIDE COMPOUNDS AND OPTICAL RECORDING MEDIA MADE BY USING THE SAME Mitsui Chemicals, Inc. (JP) 2004-08-11 EP disclosed
US-6627288-B1 Optical recording medium and porphycene compound MITSUI CHEMICALS, INC. (JP) 2003-09-30 US disclosed
US-20030091931-A1 Benzbisazole compound and optical recording medium containing the compound MITSUI CHEMICALS, INC. (JP) 2003-05-15 US disclosed
EP-1245571-A1 BENZBISAZOLE COMPOUND AND OPTICAL RECORDING MEDIUM CONTAINING THE COMPOUND Mitsui Chemicals, Inc. (JP) 2002-10-02 EP disclosed
EP-1180765-A1 Optical recording medium and porphycene compound Mitsui Chemicals, Inc. (JP) 2002-02-20 EP disclosed
US-6106999-A SENSITIVITY TO GENERAL-PURPOSE VISIBLE LIGHT LASER, SO THAT HIGH-SPEED SCANNING EXPOSURE IS POSSIBLE BY LASER, AND EXTREMELY FINE HIGH RESOLUTION CAN BE OBTAINED; CAN BE USED FOR COATING OR PRINTING UNDER SAFELIGHT IRRADIATING CONDITIONS MITSUI CHEMICALS (JP) 2000-08-22 US disclosed