SCHEMBL1981981

SCHEMBL1981981

O=[Nb].[BaH2].[SrH2]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1982859 0.89
SCHEMBL1981467 0.89
SCHEMBL7156560 0.80
SCHEMBL29019020 0.80
SCHEMBL28130690 0.80
SCHEMBL1982544 0.80
SCHEMBL1668103 0.80
SCHEMBL27594707 0.80
SCHEMBL1225125 0.80
SCHEMBL6217381 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 46 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108442250-B A kind of large-span bridge deck composite structure layer construction technology 王婵 2018-11-20 CN claimed
CN-108751965-A A kind of ceramic material with anion emission function 佛山市华强协兴陶瓷有限公司 2018-11-06 CN claimed
CN-108442250-A A kind of large-span bridge deck composite structure layer construction technology 王婵 2018-08-24 CN claimed
CN-107176833-A A kind of high temperature resistant electrical ceramics and preparation method thereof 合肥择浚电气设备有限公司 2017-09-19 CN claimed
CN-105174939-A Electronic ceramic material and preparing method thereof YANG YANG 2015-12-23 CN claimed
US-20070097323-A1 Electro-optical wobulator HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 2007-05-03 US claimed
JP-2000504882-A 2000-04-18 JP claimed
US-5888585-A APPLYING A LIQUID PRECURSOR CONTAINING BARIUM, STRONTIUM, AND NIOBIUM, TREATING BY BAKING, ANNEALING, OR EXPOSING TO VACUUM TO FORM THE NON-FERROELECTRIC OXIDE; MEMORY CELL CAPACITORS SYMETRIX CORPORATION (US) 1999-03-30 US claimed
EP-0880800-A1 HIGH DIELECTRIC CONSTANT BARIUM-STRONTIUM-NIOBIUM OXIDES FOR INTEGRATED CIRCUIT APPLICATIONS SYMETRIX CORPORATION (US) 1998-12-02 EP claimed
WO-1997029511-A1 HIGH DIELECTRIC CONSTANT BARIUM-STRONTIUM-NIOBIUM OXIDES FOR INTEGRATED CIRCUIT APPLICATIONS SYMETRIX CORPORATION (US) 1997-08-14 WO claimed
US-5223966-A METHOD AND APPARATUS FOR OBTAINING MODULATED LIGHT INDICATIVE OF AN IMAGE OPERATIONALLY FORMED BY PROJECTING AN INPUTTED IMAGE ON THE FLAT PLATE OF AN OPTICAL INDUCTION REFLECTIVE INDEX CRYSTAL CANON KABUSHIKI KAISHA (JP) 1993-06-29 US claimed
CN-108442250-B A kind of large-span bridge deck composite structure layer construction technology 王婵 2018-11-20 CN disclosed
CN-108751965-A A kind of ceramic material with anion emission function 佛山市华强协兴陶瓷有限公司 2018-11-06 CN disclosed
CN-108442250-A A kind of large-span bridge deck composite structure layer construction technology 王婵 2018-08-24 CN disclosed
CN-108395225-A A kind of electronic ceramics 佛山市拓拓网络科技有限公司 2018-08-14 CN disclosed
US-5751034-A High dielectric constant barium-strontium-niobium oxides for integrated circuit applications SYMETRIX CORPORATION (US) 1998-05-12 US disclosed
WO-1997029511-A1 HIGH DIELECTRIC CONSTANT BARIUM-STRONTIUM-NIOBIUM OXIDES FOR INTEGRATED CIRCUIT APPLICATIONS SYMETRIX CORPORATION (US) 1997-08-14 WO disclosed
WO-1997029511-A1 HIGH DIELECTRIC CONSTANT BARIUM-STRONTIUM-NIOBIUM OXIDES FOR INTEGRATED CIRCUIT APPLICATIONS SYMETRIX CORPORATION (US) 1997-08-14 WO disclosed
US-5223966-A METHOD AND APPARATUS FOR OBTAINING MODULATED LIGHT INDICATIVE OF AN IMAGE OPERATIONALLY FORMED BY PROJECTING AN INPUTTED IMAGE ON THE FLAT PLATE OF AN OPTICAL INDUCTION REFLECTIVE INDEX CRYSTAL CANON KABUSHIKI KAISHA (JP) 1993-06-29 US disclosed
EP-0456130-A2 Apparatus and method for optically effecting image operations CANON KABUSHIKI KAISHA (JP) 1991-11-13 EP disclosed