Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 1/20 | 0.30 |
| ▸ | MAPT | P10636 | 1/20 | 0.30 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL19852634 | 0.94 | — | — | |
| SCHEMBL20799733 | 0.93 | — | — | |
| SCHEMBL20799738 | 0.87 | — | — | |
| SCHEMBL19852579 | 0.86 | — | — | |
| SCHEMBL19846358 | 0.86 | KDM4E (0.30) | NPSR1 | |
| SCHEMBL19846363 | 0.86 | CA12 (0.32) | — | |
| SCHEMBL19756115 | 0.85 | TRPV1 (0.37) | LMNAMAPTNPSR1 | |
| SCHEMBL19852580 | 0.83 | — | — | |
| SCHEMBL24945442 | 0.82 | ACP1 (0.36) | — | |
| SCHEMBL19846360 | 0.82 | KDM4E (0.36) | MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230273519-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR CORPORATION (JP) | 2023-08-31 | — | — | US | disclosed |
| US-20230023593-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-01-26 | — | — | US | disclosed |
| US-20220299875-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, AND METHOD FOR FORMING PATTERN | JSR CORPORATION (JP) | 2022-09-22 | — | — | US | disclosed |
| US-11269251-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-03-08 | — | — | US | disclosed |
| US-11156916-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-10-26 | — | — | US | disclosed |
| US-11048165-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-06-29 | — | — | US | disclosed |
| US-11022883-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-06-01 | — | — | US | disclosed |
| US-10968175-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-04-06 | — | — | US | disclosed |
| US-10948822-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-03-16 | — | — | US | disclosed |
| US-10915021-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-02-09 | — | — | US | disclosed |
| US-10871711-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-12-22 | — | — | US | disclosed |
| US-10816899-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-10-27 | — | — | US | disclosed |
| US-10802400-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-10-13 | — | — | US | disclosed |
| US-20190324368-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-10-24 | — | — | US | disclosed |
| US-20190113844-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-04-18 | — | — | US | disclosed |
| US-20190113843-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-04-18 | — | — | US | disclosed |
| US-20190113842-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-04-18 | — | — | US | disclosed |
| US-20190094690-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-03-28 | — | — | US | disclosed |
| US-20190079399-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-03-14 | — | — | US | disclosed |
| US-20180039173-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10915021-B2 | Monomer, polymer, resist composition, and patterning process | H1-4, PCNA, H1-0 | LMNA 1402/4885MAPT 2513/4885NPSR1 3316/4885 |
| US-10968175-B2 | Resist composition and patterning process | HNRNPU, BRWD1, BICRA | LMNA 2894/4885MAPT 2136/4885NPSR1 1768/4885 |
| US-20230023593-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | HNRNPU, EWSR1, HNRNPR | LMNA 1418/4885MAPT 2852/4885NPSR1 715/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.