Tetrafluoroethylene

Tetrafluoroethylene

SCHEMBL198739

FC(F)=C(F)F.FC1=C(F)OC(C(F)(F)F)(C(F)(F)F)O1

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL60538 0.89
SCHEMBL17184227 0.75
SCHEMBL9974583 0.74
SCHEMBL4805998 0.72
SCHEMBL9422485 0.72
SCHEMBL8731684 0.69
Tetrafluoroethylene SCHEMBL19133726 0.69
SCHEMBL9569852 0.69
SCHEMBL19525685 0.67
SCHEMBL10395967 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6682666-B2 ROTATING AND POLYMERIZING FIRST COMPONENT; FILLING LIQUID SECOND COMPONENT AND POLYMERIZING WHILE SUBJECTING FIRST COMPONENT TO DISSOLUTION, DIFFUSION OR RADIAL MIXING SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-01-27 US claimed
US-20020031318-A1 Object with radially varying refractive index, and producing method and apparatus thereof SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-03-14 US claimed
US-8323872-B2 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-04 US disclosed
US-20120249995-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO. LTD. (JP) 2012-10-04 US disclosed
EP-1589377-B1 Patterning process and resist overcoat material SHINETSU CHEMICAL CO (JP) 2012-05-23 EP disclosed
US-8088537-B2 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-03 US disclosed
US-7670750-B2 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-02 US disclosed
US-7642034-B2 Photoresists; (meth)acrylate fluoropolymer which is insoluble in water, dissolvable in aqueous alkaline solution, and immiscible with resist films so that it enables pattern formation by the immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-05 US disclosed
US-20090197200-A1 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-06 US disclosed
US-7569323-B2 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-04 US disclosed
US-7455952-B2 Patterning process and resist overcoat material SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-11-25 US disclosed
US-20070122736-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. 2007-05-31 US disclosed
US-20070122741-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed
US-20070026341-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-02-01 US disclosed
US-20070003867-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-04 US disclosed
US-20060029884-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-02-09 US disclosed
EP-1589377-A2 Patterning process and resist overcoat material SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-10-26 EP disclosed
US-20050233254-A1 Patterning process and resist overcoat material SHIN-ETSU CHEMICAL CO., LTD. 2005-10-20 US disclosed
US-6197091-B1 Ozone purification process THE BOC GROUP, INC. 2001-03-06 US disclosed
EP-1036758-A1 Ozone purification THE BOC GROUP, INC. (US) 2000-09-20 EP disclosed