⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5178085 | 0.87 | — | — | |
| SCHEMBL6554872 | 0.87 | — | — | |
| SCHEMBL197236 | 0.82 | — | — | |
| SCHEMBL234984 | 0.82 | — | — | |
| SCHEMBL82413 | 0.82 | — | — | |
| SCHEMBL29435147 | 0.82 | — | — | |
| SCHEMBL9690693 | 0.82 | — | — | |
| SCHEMBL18204297 | 0.82 | — | — | |
| SCHEMBL6361831 | 0.78 | — | — | |
| SCHEMBL25316401 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 390 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240377693-A1 | OPTICAL DEVICES AND METHODS FOR ADJUSTABLE LIGHT ATTENUATION BASED ON ANISOTROPIC MATERIALS | META PLATFORMS TECHNOLOGIES, LLC | 2024-11-14 | — | — | US | claimed |
| WO-2024198492-A1 | MAGNETIC COMPENSATION MTJ DEVICE, MANUFACTURING METHOD THEREFOR, AND MRAM DEVICE | 浙江驰拓科技有限公司 | 2024-10-03 | — | — | WO | claimed |
| CN-118742190-A | Magnetic compensation MTJ device, manufacturing method thereof and MRAM device | 浙江驰拓科技有限公司 | 2024-10-01 | — | — | CN | claimed |
| CN-118510373-A | Ultrahigh frequency spin torque nano-oscillator based on ferrimagnetic spinelle | 电子科技大学 | 2024-08-16 | — | — | CN | claimed |
| EP-4111177-B1 | A METHOD FOR DETERMINING A MATERIAL PROPERTY OF A SOLID SUBSTRATE | FRIEMANN DMITRIEV ALEXANDER (SE) | 2023-12-13 | — | — | EP | claimed |
| CN-117174129-A | Structure of magnetic memory cell, preparation method and magnetic random access memory | 华为技术有限公司 | 2023-12-05 | — | — | CN | claimed |
| EP-4111177-A1 | A METHOD FOR DETERMINING A MATERIAL PROPERTY OF A SOLID SUBSTRATE | Friemann Dmitriev, Alexander (SE) | 2023-01-04 | — | — | EP | claimed |
| CN-115443548-A | Magnetic tunnel junction and storage unit | 华为技术有限公司 | 2022-12-06 | — | — | CN | claimed |
| WO-2022021169-A1 | MAGNETIC TUNNEL JUNCTION AND STORAGE UNIT | 华为技术有限公司 | 2022-02-03 | — | — | WO | claimed |
| US-11119042-B2 | All-optical write/read scheme for magnetic nanostructures | PURDUE RESEARCH FOUNDATION (US) | 2021-09-14 | — | — | US | claimed |
| CN-110931633-A | Magnetic tunnel junction memory cell and memory | 北京航空航天大学 | 2020-03-27 | — | — | CN | claimed |
| US-20190331598-A1 | SURFACE-PLASMON OPTO-MAGNETIC FIELD ENHANCEMENT FOR ALL-OPTICAL MAGNETIZATION SWITCHING | PURDUE RESEARCH FOUNDATION (US) | 2019-10-31 | — | — | US | claimed |
| US-10388349-B2 | Writing of a magnetic memory with electric pulses | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 2019-08-20 | — | — | US | claimed |
| US-20190088300-A1 | WRITING OF A MAGNETIC MEMORY WITH ELECTRIC PULSES | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA | 2019-03-21 | — | — | US | claimed |
| CN-104995685-B | Discontinuous magnesium insert layer to improve magnetic tunnel junction element short circuit | 海德威科技公司 | 2017-10-03 | — | — | CN | claimed |
| US-20170229642-A1 | Low Magnetic Moment Materials for Spin Transfer Torque Magnetoresistive Random Access Memory Devices | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2017-08-10 | — | — | US | claimed |
| CN-104995685-A | MG DISCONTINUOUS INSERTION LAYER FOR IMPROVING MT J SHUNT | HEADWAY TECHNOLOGIES INC | 2015-10-21 | — | — | CN | claimed |
| US-8405173-B2 | Magnetic memory devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-03-26 | — | — | US | claimed |
| US-8149547-B2 | Magnetoresistive effect element and thin-film magnetic head with the magnetoresistive effect element | TDK CORPORATION (JP) | 2012-04-03 | — | — | US | claimed |
| US-20090231762-A1 | MAGNETORESISTIVE EFFECT ELEMENT AND THIN-FILM MAGNETIC HEAD WITH THE MAGNETORESISTIVE EFFECT ELEMENT | TDK CORPORATION (JP) | 2009-09-17 | — | — | US | claimed |