⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL19973283 | 0.87 | — | — | |
| SCHEMBL26964235 | 0.82 | — | — | |
| SCHEMBL19973243 | 0.78 | — | — | |
| SCHEMBL19973324 | 0.78 | — | — | |
| SCHEMBL20451340 | 0.77 | — | — | |
| SCHEMBL20451262 | 0.77 | — | — | |
| SCHEMBL20127095 | 0.74 | — | — | |
| SCHEMBL19973277 | 0.74 | — | — | |
| SCHEMBL20451294 | 0.72 | — | — | |
| SCHEMBL19973287 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3516089-B1 | COMPOSITIONS AND METHODS FOR THE DEPOSITION OF SILICON OXIDE FILMS | VERSUM MAT US LLC (US) | 2023-12-20 | — | — | EP | claimed |
| CN-113403605-A | Compositions and methods for depositing silicon oxide films | 弗萨姆材料美国有限责任公司 | 2021-09-17 | — | — | CN | claimed |
| CN-109963963-B | Compositions and methods for depositing silicon oxide films | 弗萨姆材料美国有限责任公司 | 2021-06-25 | — | — | CN | claimed |
| EP-3516089-A1 | COMPOSITIONS AND METHODS FOR THE DEPOSITION OF SILICON OXIDE FILMS | Versum Materials US, LLC (US) | 2019-07-31 | — | — | EP | claimed |
| WO-2018053129-A1 | COMPOSITIONS AND METHODS FOR THE DEPOSITION OF SILICON OXIDE FILMS | VERSUM MATERIALS US, LLC (US) | 2018-03-22 | — | — | WO | claimed |
| US-20250285858-A1 | SINGLE WAFER REACTOR, LOW TEMPERATURE, THERMAL SILICON NITRIDE DEPOSITION | LAM RES CORP (US) | 2025-09-11 | — | — | US | disclosed |
| WO-2024102763-A1 | A ROBUST ICEFILL METHOD TO PROVIDE VOID FREE TRENCH FILL FOR LOGIC AND MEMORY APPLICATIONS | LAM RESEARCH CORPORATION (US) | 2024-05-16 | — | — | WO | disclosed |
| WO-2024091844-A1 | FLUORINE REDUCTION IS SILICON-CONTAINING FILMS | LAM RESEARCH CORPORATION (US) | 2024-05-02 | — | — | WO | disclosed |
| WO-2023230296-A1 | SINGLE WAFER REACTOR, LOW TEMPERATURE, THERMAL SILICON NITRIDE DEPOSITION | LAM RESEARCH CORPORATION (US) | 2023-11-30 | — | — | WO | disclosed |
| WO-2023205284-A1 | LATERAL GAP FILL | LAM RESEARCH CORPORATION (US) | 2023-10-26 | — | — | WO | disclosed |
| WO-2023178273-A1 | REDUCING CAPACITANCE IN SEMICONDUCTOR DEVICES | LAM RESEARCH CORPORATION (US) | 2023-09-21 | — | — | WO | disclosed |
| WO-2023159012-A1 | HIGH PRESSURE INERT OXIDATION AND IN-SITU ANNEALING PROCESS TO IMPROVE FILM SEAM QUALITY AND WER | LAM RESEARCH CORPORATION (US) | 2023-08-24 | — | — | WO | disclosed |
| WO-2023114401-A1 | ATOMIC LAYER DEPOSITION PULSE SEQUENCE ENGINEERING FOR IMPROVED CONFORMALITY FOR LOW TEMPERATURE PRECURSORS | LAM RESEARCH CORPORATION (US) | 2023-06-22 | — | — | WO | disclosed |
| WO-2023114870-A1 | HIGH PRESSURE PLASMA INHIBITION | LAM RESEARCH CORPORATION (US) | 2023-06-22 | — | — | WO | disclosed |
| WO-2023114898-A1 | METHOD TO SMOOTH SIDEWALL ROUGHNESS AND MAINTAIN REENTRANT STRUCTURES DURING DIELECTRIC GAP FILL | LAM RESEARCH CORPORATION (US) | 2023-06-22 | — | — | WO | disclosed |
| WO-2023076524-A1 | ATOMIC LAYER DEPOSITION SEAM REDUCTION | LAM RESEARCH CORPORATION (US) | 2023-05-04 | — | — | WO | disclosed |
| CN-113403605-A | Compositions and methods for depositing silicon oxide films | 弗萨姆材料美国有限责任公司 | 2021-09-17 | — | — | CN | disclosed |