⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Methacrylic Acid SCHEMBL8621756 | 1.00 | — | — | |
| Methacrylic Acid SCHEMBL6705593 | 0.85 | POLB (0.34) | — | |
| Methacrylic Acid SCHEMBL27537695 | 0.79 | — | — | |
| Methacrylic Acid SCHEMBL28326013 | 0.79 | — | — | |
| SCHEMBL2375389 | 0.78 | KMT2A (0.38) | — | |
| SCHEMBL1946794 | 0.78 | KMT2A (0.38) | — | |
| Ethylene SCHEMBL27405348 | 0.78 | — | — | |
| SCHEMBL296237 | 0.78 | — | — | |
| SCHEMBL27627658 | 0.75 | — | — | |
| Water SCHEMBL28320241 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 66 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9293328-B2 | Semiconductor device structures comprising a polymer bonded to a base material and methods of fabrication | MICRON TECHNOLOGY, INC. (US) | 2016-03-22 | — | — | US | claimed |
| US-20140246759-A1 | SEMICONDUCTOR DEVICE STRUCTURES COMPRISING A POLYMER BONDED TO A BASE MATERIAL AND METHODS OF FABRICATION | MICRON TECHNOLOGY, INC. (US) | 2014-09-04 | — | — | US | claimed |
| US-8623458-B2 | Methods of directed self-assembly, and layered structures formed therefrom | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-01-07 | — | — | US | claimed |
| WO-2011080016-A2 | METHODS OF DIRECTED SELF-ASSEMBLY AND LAYERED STRUCTURES FORMED THEREFROM | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-07-07 | — | — | WO | claimed |
| US-20110147984-A1 | METHODS OF DIRECTED SELF-ASSEMBLY, AND LAYERED STRUCTURES FORMED THEREFROM | GLOBALFOUNDRIES U.S. INC. | 2011-06-23 | — | — | US | claimed |
| US-20040063809-A1 | Polymeric binders for inkjet inks | FU ZHENWEN (US) | 2004-04-01 | — | — | US | claimed |
| EP-1371697-A2 | Polymeric binders for inkjet inks | ROHM AND HAAS COMPANY (US) | 2003-12-17 | — | — | EP | claimed |
| CN-111788236-B | Photoactive polymer brush materials and EUV patterning using the same | 三星电子株式会社 | 2023-07-04 | — | — | CN | disclosed |
| US-10831102-B2 | Photoactive polymer brush materials and EUV patterning using the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2020-11-10 | — | — | US | disclosed |
| CN-111788236-A | Photoactive polymer brush materials and EUV patterning using the same | 国际商业机器公司 | 2020-10-16 | — | — | CN | disclosed |
| CN-107210197-B | Hybrid topography and chemical pre-patterning for directed self-assembly of block copolymers | 国际商业机器公司 | 2020-06-19 | — | — | CN | disclosed |
| US-10600680-B2 | Chemoepitaxy etch trim using a self aligned hard mask for metal line to via | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2020-03-24 | — | — | US | disclosed |
| WO-2019171188-A1 | PHOTOACTIVE POLYMER BRUSH MATERIALS AND EUV PATTERNING USING THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2019-09-12 | — | — | WO | disclosed |
| WO-2011073013-A1 | METHODS OF DIRECTED SELF-ASSEMBLY WITH 193 - NM IMMERSION LITHOGRAPHY AND LAYERED STRUCTURES FORMED THEREFROM | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-06-23 | — | — | WO | disclosed |
| US-20110147984-A1 | METHODS OF DIRECTED SELF-ASSEMBLY, AND LAYERED STRUCTURES FORMED THEREFROM | GLOBALFOUNDRIES U.S. INC. | 2011-06-23 | — | — | US | disclosed |
| US-20110147983-A1 | METHODS OF DIRECTED SELF-ASSEMBLY AND LAYERED STRUCTURES FORMED THEREFROM | GLOBALFOUNDRIES U.S. INC. | 2011-06-23 | — | — | US | disclosed |
| US-20110147985-A1 | METHODS OF DIRECTED SELF-ASSEMBLY AND LAYERED STRUCTURES FORMED THEREFROM | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2011-06-23 | — | — | US | disclosed |
| US-6653048-B2 | Radiation sensitive bilayer resists which are used in manufacture of integrated circuits | INTERNATIONAL BUSINESS MACHINES CORP. | 2003-11-25 | — | — | US | disclosed |
| US-20020127490-A1 | High silicon content monomers and polymers suitable for 193 nm bilayer resists | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2002-09-12 | — | — | US | disclosed |
| US-6444408-B1 | High silicon content monomers and polymers suitable for 193 nm bilayer resists | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-09-03 | — | — | US | disclosed |