Iodide

Iodide

SCHEMBL2028210

[I-].[In+]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ACHECHRM1CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNG

The experimentally established mechanism targets of Iodide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28005566 0.71
SCHEMBL27790390 0.71
SCHEMBL28227086 0.71
SCHEMBL30462986 0.71
Water SCHEMBL16776762 0.71
Iodide SCHEMBL6027905 0.50
Iodide SCHEMBL4387250 0.50
Iodide SCHEMBL4831301 0.50
Iodide SCHEMBL287799 0.50
Iodide SCHEMBL9115513 0.50

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 125 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12252452-B2 Coatings on particles of high energy materials and methods of forming same Forge Nano, Inc. (US) 2025-03-18 US claimed
CN-108866624-A The preparation method of lead doping indium monoiodide polycrystal film 燕山大学 2018-11-23 CN claimed
CN-105839053-B A kind of preparation method of indium monoiodide polycrystal film 燕山大学 2018-05-01 CN claimed
US-9825287-B2 Surface modification agents for lithium batteries UCHICAGO ARGONNE, LLC (US) 2017-11-21 US claimed
CN-105839053-A Preparation method of indium monoiodide polycrystalline thin film 燕山大学 2016-08-10 CN claimed
US-9296622-B2 Method for continuous preparation of indium-tin coprecipitates and indium-tin-oxide nanopowders with substantially homogeneous indium/tin composition, controllable shape and particle size HY-POWER COATINGS LIMITED (CA) 2016-03-29 US claimed
US-20150287987-A1 SURFACE MODIFICATION AGENTS FOR LITHIUM BATTERIES UNITED STATES DEPARTMENT OF ENERGY 2015-10-08 US claimed
US-9082702-B2 Atomic layer deposition methods for metal gate electrodes APPLIED MATERIALS, INC. (US) 2015-07-14 US claimed
US-9065115-B2 Surface modification agents for lithium batteries UCHICAGO ARGONNE, LLC (US) 2015-06-23 US claimed
US-20140054521-A1 METHOD FOR CONTINUOUS PREPARATION OF INDIUM-TIN COPRECIPITATES AND INDIUM-TIN-OXIDE NANOPOWDERS WITH SUBSTANTIALLY HOMOGENEOUS INDIUM/TIN COMPOSITION, CONTROLLABLE SHAPE AND PARTICLE SIZE HY-POWER NANO INC. (CA) 2014-02-27 US claimed
WO-2014029005-A1 METHOD FOR CONTINUOUS PREPARATION OF INDIUM-TIN COPRECIPITATES AND INDIUM-TIN-OXIDE NANOPOWDERS WITH SUBSTANTIALLY HOMOGENEOUS INDIUM/TIN COMPOSITION, CONTROLLABLE SHAPE AND PARTICLE SIZE HY-POWER NANO INC. (CA) 2014-02-27 WO claimed
US-20130221445-A1 Atomic Layer Deposition Methods For Metal Gate Electrodes APPLIED MATERIALS, INC. 2013-08-29 US claimed
US-20120276450-A1 SURFACE MODIFICATION AGENTS FOR LITHIUM BATTERIES UCHICAGO ARGONNE, LLC 2012-11-01 US claimed
US-20120148731-A1 SURFACE MODIFICATION AGENTS FOR LITHIUM BATTERIES UNITED STATES DEPARTMENT OF ENERGY 2012-06-14 US claimed
US-20090286157-A1 Surface modification agents for lithium batteries U.S. DEPT. OF ENERGY 2009-11-19 US claimed
US-6533966-B1 Method for preparing suspensions and powders based in indium tin oxide and the use thereof INSTITUT FÜR NEUE MATERIALIEN GEM. GMBH (DE) 2003-03-18 US claimed
US-5023877-A Miniature, optically pumped narrow line solid state laser THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE (US) 1991-06-11 US claimed
US-4832933-A Metal tetraiodomercurates as infrared detectors THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY (US) 1989-05-23 US claimed
US-20250188002-A1 COATINGS ON PARTICLES OF HIGH ENERGY MATERIALS AND METHODS OF FORMING SAME Forge Nano Inc. 2025-06-12 US disclosed
US-4028578-A Gas discharge dielectric containing a source of boron, gallium, indium, or thallium OWENS-ILLINOIS, INC. (US) 1977-06-07 US disclosed