⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10596752 | 0.87 | CA12 (0.31) | — | |
| SCHEMBL9223081 | 0.81 | — | — | |
| SCHEMBL2058066 | 0.79 | — | — | |
| SCHEMBL27999156 | 0.78 | — | — | |
| SCHEMBL973899 | 0.73 | — | — | |
| SCHEMBL3669514 | 0.71 | — | — | |
| SCHEMBL57247 | 0.71 | — | — | |
| SCHEMBL8362725 | 0.71 | — | — | |
| SCHEMBL584300 | 0.71 | — | — | |
| SCHEMBL7624540 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7968507-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | claimed |
| US-20090084406-A1 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. | 2009-04-02 | — | — | US | claimed |
| EP-3241075-B1 | STRIPPING COMPOSITIONS FOR REMOVING PHOTORESISTS FROM SEMICONDUCTOR SUBSTRATES | FUJIFILM ELECTRONIC MAT USA INC (US) | 2024-10-16 | — | — | EP | disclosed |
| US-9914902-B2 | Stripping compositions for removing photoresists from semiconductor substrates | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) | 2018-03-13 | — | — | US | disclosed |
| US-20160186106-A1 | STRIPPING COMPOSITIONS FOR REMOVING PHOTORESISTS FROM SEMICONDUCTOR SUBSTRATES | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. | 2016-06-30 | — | — | US | disclosed |
| US-8163095-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-04-24 | — | — | US | disclosed |
| US-20110206829-A1 | COMPOSITION FOR STRIPPING AND STRIPPING METHOD | SAMSUNG DISPLAY CO., LTD. (KR) | 2011-08-25 | — | — | US | disclosed |
| US-7968507-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | disclosed |
| US-20090084406-A1 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. | 2009-04-02 | — | — | US | disclosed |
| US-6638694-B2 | Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays | MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) | 2003-10-28 | — | — | US | disclosed |
| US-20030186175-A1 | RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME | IKEMOTO KAZUTO (JP) | 2003-10-02 | — | — | US | disclosed |
| EP-1031884-A2 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2000-08-30 | — | — | EP | disclosed |