Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SLC7A5 | Q01650 | 2/20 | 0.88 |
| ▸ | SLC1A3 | P43003 | 2/20 | 0.44 |
| ▸ | SLC1A2 | P43004 | 2/20 | 0.44 |
| ▸ | SLC1A1 | P43005 | 2/20 | 0.44 |
| ▸ | TP53 | P04637 | 1/20 | 0.40 |
| ▸ | DPP4 | P27487 | 1/20 | 0.38 |
| ▸ | FAP | Q12884 | 1/20 | 0.38 |
| ▸ | DPP8 | Q6V1X1 | 1/20 | 0.38 |
| ▸ | DPP9 | Q86TI2 | 1/20 | 0.38 |
| ▸ | DPP7 | Q9UHL4 | 1/20 | 0.38 |
| ▸ | LAP3 | P28838 | 1/20 | 0.38 |
| ▸ | USP2 | O75604 | 1/20 | 0.36 |
| ▸ | SLCO1B1 | Q9Y6L6 | 1/20 | 0.36 |
| ▸ | GABRP | O00591 | 4/20 | 0.35 |
| ▸ | GABRD | O14764 | 4/20 | 0.35 |
| ▸ | GABRA1 | P14867 | 4/20 | 0.35 |
| ▸ | GABRB1 | P18505 | 4/20 | 0.35 |
| ▸ | GABRG2 | P18507 | 4/20 | 0.35 |
| ▸ | GABRB3 | P28472 | 4/20 | 0.35 |
| ▸ | GABRA5 | P31644 | 4/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Valine SCHEMBL21044833 | 0.94 | SLC7A5 (0.88) | SLC7A5SLC1A3SLC1A2SLC1A1TP53 | |
| Valine SCHEMBL22471756 | 0.94 | SLC7A5 (0.88) | SLC7A5SLC1A3SLC1A2SLC1A1TP53 | |
| Valine SCHEMBL20582587 | 0.94 | SLC7A5 (0.88) | SLC7A5SLC1A3SLC1A2SLC1A1TP53 | |
| Valine SCHEMBL1813972 | 0.94 | SLC7A5 (1.00) | SLC7A5SLC1A3SLC1A2SLC1A1TP53 | |
| Valine SCHEMBL41225 | 0.94 | SLC7A5 (1.00) | SLC7A5SLC1A3SLC1A2SLC1A1TP53 | |
| Valine SCHEMBL8515 | 0.94 | — | — | |
| Valine SCHEMBL288203 | 0.94 | SLC7A5 (1.00) | SLC7A5SLC1A3SLC1A2SLC1A1TP53 | |
| Valine SCHEMBL2785563 | 0.94 | SLC7A5 (1.00) | SLC7A5SLC1A3SLC1A2SLC1A1TP53 | |
| Valine SCHEMBL8516 | 0.94 | — | — | |
| Valine SCHEMBL43678 | 0.94 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11929404-B2 | Transistor gates having embedded metal-insulator-metal capacitors | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2024-03-12 | — | — | US | disclosed |
| WO-2023031144-A1 | TRANSISTOR GATES HAVING EMBEDDED METAL-INSULATOR-METAL CAPACITORS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2023-03-09 | — | — | WO | disclosed |
| US-20230065091-A1 | TRANSISTOR GATES HAVING EMBEDDED METAL-INSULATOR-METAL CAPACITORS | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2023-03-02 | — | — | US | disclosed |
| US-11205698-B2 | Multiple work function nanosheet transistors with inner spacer modulation | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2021-12-21 | — | — | US | disclosed |
| US-20210328013-A1 | MULTIPLE WORK FUNCTION NANOSHEET TRANSISTORS WITH INNER SPACER MODULATION | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2021-10-21 | — | — | US | disclosed |
| US-10886281-B2 | Transistor and capacitor structures for analog memory neural network | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2021-01-05 | — | — | US | disclosed |
| US-10734501-B2 | Metal gate structure having gate metal layer with a top portion width smaller than a bottom portion width to reduce transistor gate resistance | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2020-08-04 | — | — | US | disclosed |
| US-10629601-B2 | Transistor and capacitor structures for analog memory neural network | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2020-04-21 | — | — | US | disclosed |
| US-10615257-B2 | Patterning method for nanosheet transistors | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2020-04-07 | — | — | US | disclosed |
| US-10608084-B2 | Nanosheet isolated source/drain epitaxy by surface treatment and incubation delay | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2020-03-31 | — | — | US | disclosed |
| US-20200083227-A1 | TRANSISTOR AND CAPACITOR STRUCTURES FOR ANALOG MEMORY NEURAL NETWORK | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2020-03-12 | — | — | US | disclosed |
| US-20200083326-A1 | PATTERNING METHOD FOR NANOSHEET TRANSISTORS | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2020-03-12 | — | — | US | disclosed |
| US-20200058764-A1 | METAL GATE STRUCTURE TO REDUCE TRANSISTOR GATE RESISTANCE | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2020-02-20 | — | — | US | disclosed |
| US-20190348403-A1 | STRUCTURE AND METHOD TO FORM NANOSHEET DEVICES WITH BOTTOM ISOLATION | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2019-11-14 | — | — | US | disclosed |
| US-10453824-B1 | Structure and method to form nanosheet devices with bottom isolation | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2019-10-22 | — | — | US | disclosed |
| US-10374034-B1 | Undercut control in isotropic wet etch processes | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2019-08-06 | — | — | US | disclosed |
| US-20190221640-A1 | NANOSHEET ISOLATED SOURCE/DRAIN EPITAXY BY SURFACE TREATMENT AND INCUBATION DELAY | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2019-07-18 | — | — | US | disclosed |
| US-10256301-B1 | Nanosheet isolated source/drain epitaxy by surface treatment and incubation delay | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2019-04-09 | — | — | US | disclosed |