⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2102647 | 0.75 | — | — | |
| SCHEMBL2268851 | 0.71 | — | — | |
| SCHEMBL2101389 | 0.71 | — | — | |
| SCHEMBL20499831 | 0.71 | — | — | |
| SCHEMBL30986978 | 0.69 | — | — | |
| SCHEMBL2102474 | 0.69 | — | — | |
| SCHEMBL2271492 | 0.67 | — | — | |
| SCHEMBL4991987 | 0.67 | — | — | |
| SCHEMBL2102456 | 0.67 | — | — | |
| SCHEMBL2102143 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11631580-B2 | Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials | VERSUM MATERIALS US, LLC (US) | 2023-04-18 | — | — | US | claimed |
| US-20220189767-A1 | FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS | VERSUM MATERIALS US, LLC (US) | 2022-06-16 | — | — | US | claimed |
| US-11081337-B2 | Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials | Versum Materials U.S., LLC (US) | 2021-08-03 | — | — | US | claimed |
| WO-2018170126-A1 | NEW FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | WO | claimed |
| US-20180269057-A1 | Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroelectric Materials | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | US | claimed |
| US-11631580-B2 | Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials | VERSUM MATERIALS US, LLC (US) | 2023-04-18 | — | — | US | disclosed |
| US-20220189767-A1 | FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS | VERSUM MATERIALS US, LLC (US) | 2022-06-16 | — | — | US | disclosed |
| US-11081337-B2 | Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials | Versum Materials U.S., LLC (US) | 2021-08-03 | — | — | US | disclosed |
| WO-2018170126-A1 | NEW FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | WO | disclosed |
| US-20180269057-A1 | Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroelectric Materials | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | US | disclosed |
| US-8404584-B2 | Method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2013-03-26 | — | — | US | disclosed |
| US-8164166-B2 | Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2012-04-24 | — | — | US | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |
| US-20090085170-A1 | INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2009-04-02 | — | — | US | disclosed |