SCHEMBL2102073

SCHEMBL2102073

CCN(CC)C(C)([SiH3])N(CC)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2100159 0.74
SCHEMBL2269485 0.73
SCHEMBL2104091 0.73
SCHEMBL2269871 0.73
SCHEMBL27131234 0.73
SCHEMBL2100936 0.73
SCHEMBL627752 0.69
SCHEMBL6450406 0.69 TSHR (0.33)
SCHEMBL11203414 0.69
SCHEMBL2272460 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10658296-B2 Dielectric film for semiconductor fabrication TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2020-05-19 US claimed
US-20190035673-A1 FLOWABLE DIELECTRICS FROM VAPOR PHASE PRECURSORS INTEL CORP (US) 2019-01-31 US claimed
US-20180096936-A1 Dielectric Film For Semiconductor Fabrication TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2018-04-05 US claimed
WO-2017171817-A1 FLOWABLE DIELECTRICS FROM VAPOR PHASE PRECURSORS INTEL CORPORATION (US) 2017-10-05 WO claimed
US-11901295-B2 Dielectric film for semiconductor fabrication TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2024-02-13 US disclosed
US-20240030026-A1 PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROCESSING APPARATUS, AND RECORDING MEDIUM Kokusai Electric Corporation (JP) 2024-01-25 US disclosed
WO-2022264430-A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM 株式会社KOKUSAI ELECTRIC 2022-12-22 WO disclosed
US-20220223528-A1 Dielectric Film for Semiconductor Fabrication TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2022-07-14 US disclosed
US-11296027-B2 Dielectric film for semiconductor fabrication TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2022-04-05 US disclosed
US-11152306-B2 Dielectric film for semiconductor fabrication TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2021-10-19 US disclosed
US-10658296-B2 Dielectric film for semiconductor fabrication TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2020-05-19 US disclosed
US-20200083168-A1 Dielectric Film for Semiconductor Fabrication TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2020-03-12 US disclosed
EP-1630249-A2 Process for chemical vapor deposition of silicon nitride. AIR PRODUCTS AND CHEMICALS, INC. (US) 2006-03-01 EP disclosed
WO-2006014471-A1 SILICON NITRIDE FILM WITH STRESS CONTROL APPLIED MATERIALS, INC. (US) 2006-02-09 WO disclosed
US-20060009041-A1 Silicon nitride film with stress control APPLIED MATERIALS, INC. 2006-01-12 US disclosed
EP-0228095-B1 PROCESS FOR THE PREPARATION OF OLEFINIC SILANES AND SILOXANES UNION CARBIDE CORPORATION (US) 1992-01-22 EP disclosed
US-4780554-A O-silylated ketene acetals and enol ethers and method of preparation UNION CARBIDE CORPORATION (US) 1988-10-25 US disclosed
EP-0228095-A2 Process for the preparation of olefinic silanes and siloxanes UNION CARBIDE CORPORATION (US) 1987-07-08 EP disclosed
US-4668812-A Process for the preparation of olefinic silanes and siloxanes UNION CARBIDE CORPORATION (US) 1987-05-26 US disclosed
EP-0184692-A1 Method of preparation of o-silylated ketene acetals and enol ethers UNION CARBIDE CORPORATION (US) 1986-06-18 EP disclosed