⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL21271611 | 0.79 | — | — | |
| SCHEMBL25168621 | 0.74 | — | — | |
| SCHEMBL27878913 | 0.67 | — | — | |
| SCHEMBL2101874 | 0.67 | — | — | |
| SCHEMBL2101154 | 0.63 | — | — | |
| SCHEMBL2101172 | 0.60 | — | — | |
| SCHEMBL2104414 | 0.59 | — | — | |
| SCHEMBL999358 | 0.59 | — | — | |
| SCHEMBL2267685 | 0.57 | — | — | |
| SCHEMBL2267402 | 0.57 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12584212-B2 | Compositions and methods using same for germanium seed layer | VERSUM MATERIALS US, LLC (US) | 2026-03-24 | — | — | US | claimed |
| US-20230287562-A1 | COMPOSITIONS ND METHODS USING SAME FOR GERMANIUM SEED LAYER | VERSUM MATERIALS US, LLC | 2023-09-14 | — | — | US | claimed |
| CN-116113725-A | Composition for germanium seed layer and method of using the same | 弗萨姆材料美国有限责任公司 | 2023-05-12 | — | — | CN | claimed |
| EP-4176100-A1 | COMPOSITIONS AND METHODS USING SAME FOR GERMANIUM SEED LAYER | Versum Materials US, LLC (US) | 2023-05-10 | — | — | EP | claimed |
| WO-2022020705-A1 | COMPOSITIONS AND METHODS USING SAME FOR GERMANIUM SEED LAYER | VERSUM MATERIALS US, LLC (US) | 2022-01-27 | — | — | WO | claimed |
| US-12584212-B2 | Compositions and methods using same for germanium seed layer | VERSUM MATERIALS US, LLC (US) | 2026-03-24 | — | — | US | disclosed |
| CN-109689928-B | Composition for carbon-doped silicon-containing films and method of using the same | 弗萨姆材料美国有限责任公司 | 2025-05-06 | — | — | CN | disclosed |
| CN-119900018-A | Composition for high temperature atomic layer deposition of high quality silicon oxide films | 弗萨姆材料美国有限责任公司 | 2025-04-29 | — | — | CN | disclosed |
| CN-119654438-A | Composition for carbon-doped silicon-containing film and method of using the same | 弗萨姆材料美国有限责任公司 | 2025-03-18 | — | — | CN | disclosed |
| CN-119604963-A | Hybrid atomic layer deposition | 朗姆研究公司 | 2025-03-11 | — | — | CN | disclosed |
| CN-119487614-A | Deposition and etching of silicon-containing layers | 朗姆研究公司 | 2025-02-18 | — | — | CN | disclosed |
| CN-117980534-A | Composition for film comprising silicon and boron and method of use thereof | 弗萨姆材料美国有限责任公司 | 2024-05-03 | — | — | CN | disclosed |
| US-20230287562-A1 | COMPOSITIONS ND METHODS USING SAME FOR GERMANIUM SEED LAYER | VERSUM MATERIALS US, LLC | 2023-09-14 | — | — | US | disclosed |
| US-8404584-B2 | Method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2013-03-26 | — | — | US | disclosed |
| US-8164166-B2 | Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2012-04-24 | — | — | US | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |
| US-20090085170-A1 | INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2009-04-02 | — | — | US | disclosed |