⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL19139832 | 0.69 | — | — | |
| SCHEMBL20808177 | 0.65 | — | — | |
| SCHEMBL2269218 | 0.63 | — | — | |
| SCHEMBL13853985 | 0.62 | — | — | |
| SCHEMBL2181126 | 0.62 | — | — | |
| SCHEMBL358911 | 0.61 | — | — | |
| SCHEMBL9468767 | 0.60 | — | — | |
| SCHEMBL9468764 | 0.60 | — | — | |
| SCHEMBL2727302 | 0.60 | — | — | |
| SCHEMBL11874159 | 0.57 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2463404-B1 | METHOD FOR FORMING SIO2 FILM | VERSUM MAT US LLC (US) | 2019-10-23 | — | — | EP | claimed |
| US-20140065844-A1 | Amino Vinylsilane Precursors for Stressed SiN Films | VERSUM MATERIALS US, LLC | 2014-03-06 | — | — | US | claimed |
| US-8460753-B2 | Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-06-11 | — | — | US | claimed |
| EP-2192207-B1 | Method using amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films | AIR PROD & CHEM (US) | 2012-06-20 | — | — | EP | claimed |
| EP-2463404-B1 | METHOD FOR FORMING SIO2 FILM | VERSUM MAT US LLC (US) | 2019-10-23 | — | — | EP | disclosed |
| US-20140065844-A1 | Amino Vinylsilane Precursors for Stressed SiN Films | VERSUM MATERIALS US, LLC | 2014-03-06 | — | — | US | disclosed |
| US-8580993-B2 | Amino vinylsilane precursors for stressed SiN films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-11-12 | — | — | US | disclosed |
| US-8460753-B2 | Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-06-11 | — | — | US | disclosed |
| US-8404584-B2 | Method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2013-03-26 | — | — | US | disclosed |
| EP-2192207-B1 | Method using amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films | AIR PROD & CHEM (US) | 2012-06-20 | — | — | EP | disclosed |
| EP-2465861-A1 | Amino vinylsilane precursors for compressively stressed SiN films | Air Products and Chemicals, Inc. (US) | 2012-06-20 | — | — | EP | disclosed |
| US-20120148745-A1 | Aminovinylsilane for CVD and ALD SiO2 Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2012-06-14 | — | — | US | disclosed |
| EP-2463404-A1 | Aminovinylsilane for cvd and ald sio2 films | Air Products and Chemicals, Inc. (US) | 2012-06-13 | — | — | EP | disclosed |
| US-8164166-B2 | Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2012-04-24 | — | — | US | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |
| EP-2192207-A1 | Amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2010-06-02 | — | — | EP | disclosed |
| US-20100120262-A1 | Amino Vinylsilane Precursors for Stressed SiN Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2010-05-13 | — | — | US | disclosed |
| US-20090085170-A1 | INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2009-04-02 | — | — | US | disclosed |