Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP2C19 | P33261 | 2/20 | 0.36 |
| ▸ | MEN1 | O00255 | 1/20 | 0.36 |
| ▸ | GLA | P06280 | 1/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.36 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.35 |
| ▸ | TSHR | P16473 | 1/20 | 0.35 |
| ▸ | TP53 | P04637 | 1/20 | 0.32 |
| ▸ | KDM1A | O60341 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2274237 | 0.85 | CYP2C19 (0.46) | CYP2C19MEN1GLAKMT2ACYP1A2 | |
| SCHEMBL2100763 | 0.75 | — | — | |
| SCHEMBL2102392 | 0.75 | — | — | |
| SCHEMBL2101599 | 0.74 | — | — | |
| SCHEMBL2100767 | 0.72 | — | — | |
| SCHEMBL2272072 | 0.71 | — | — | |
| SCHEMBL2276021 | 0.70 | TSHR (0.39) | CYP2C19MEN1GLAKMT2ACYP1A2 | |
| SCHEMBL2269692 | 0.69 | CYP2C19 (0.43) | CYP2C19MEN1GLAKMT2ACYP1A2 | |
| SCHEMBL2101282 | 0.68 | TSHR (0.42) | CYP2C19MEN1GLAKMT2ACYP1A2 | |
| SCHEMBL2270676 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8404584-B2 | Method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2013-03-26 | — | — | US | disclosed |
| US-8164166-B2 | Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2012-04-24 | — | — | US | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |
| US-20090085170-A1 | INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2009-04-02 | — | — | US | disclosed |