⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11743934 | 0.61 | — | — | |
| SCHEMBL19096 | 0.58 | — | — | |
| SCHEMBL7698880 | 0.50 | — | — | |
| SCHEMBL247606 | 0.50 | — | — | |
| Methane SCHEMBL27782177 | 0.50 | — | — | |
| SCHEMBL180757 | 0.50 | — | — | |
| SCHEMBL1130910 | 0.50 | — | — | |
| SCHEMBL460001 | 0.50 | — | — | |
| SCHEMBL11569584 | 0.50 | — | — | |
| SCHEMBL15366348 | 0.45 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-112239860-B | Method for forming transition metal dichalcogenide film on substrate | 三星电子株式会社 | 2025-01-10 | — | — | CN | claimed |
| CN-116180028-B | Strong and wear-resistant gradient metal ceramic composite multilayer coating and preparation method thereof | 吉林大学 | 2024-11-22 | — | — | CN | claimed |
| US-11881399-B2 | Method of forming transition metal dichalcogenide thin film | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-01-23 | — | — | US | claimed |
| CN-116180028-A | Strong and wear-resistant gradient metal ceramic composite multilayer coating and preparation method thereof | 吉林大学 | 2023-05-30 | — | — | CN | claimed |
| US-11476117-B2 | Method of forming transition metal dichalcogenide thin film | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2022-10-18 | — | — | US | claimed |
| US-12297532-B2 | Metal chalcogenide film and method and device for manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-05-13 | — | — | US | disclosed |
| US-20250027196-A1 | METHOD OF FORMING ALLOY THIN FILM USING ATOMIC LAYER DEPOSITION PROCESS INCLUDING OPTIMAL UNIT PROCESS, AND ELECTRONIC ELEMENT MANUFACTURED USING THE SAME | INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS (KR) | 2025-01-23 | — | — | US | disclosed |
| CN-112239860-B | Method for forming transition metal dichalcogenide film on substrate | 三星电子株式会社 | 2025-01-10 | — | — | CN | disclosed |
| US-20240420998-A1 | Reduction of Air Gaps in FinFET Structures | APPLIED MATERIAL, INC. (US) | 2024-12-19 | — | — | US | disclosed |
| WO-2024258830-A1 | REDUCTION OF AIR GAPS IN FINFET STRUCTURES | APPLIED MATERIALS, INC. (US) | 2024-12-19 | — | — | WO | disclosed |
| CN-116180028-B | Strong and wear-resistant gradient metal ceramic composite multilayer coating and preparation method thereof | 吉林大学 | 2024-11-22 | — | — | CN | disclosed |
| EP-4325210-A1 | COMPOSITION, STABILIZATION METHOD, METHOD FOR MEASURING AMOUNT OF LUMINESCENCE, AND STABILIZER FOR LUMINESCENT SUBSTRATE | FUJIFILM Corporation (JP) | 2024-02-21 | — | — | EP | disclosed |
| WO-2022138753-A1 | NEGATIVE ELECTRODE FOR ALL-SOLID-STATE BATTERY, ALL-SOLID-STATE BATTERY, AND NEGATIVE-ELECTRODE ACTIVE MATERIAL FOR ALL-SOLID-STATE BATTERY | 昭和電工マテリアルズ株式会社 | 2022-06-30 | — | — | WO | disclosed |
| EP-2250146-B1 | PROCESSES FOR PRODUCING TRANSITION METAL AMIDO AND IMIDO COMPOUNDS | ALBEMARLE CORP (US) | 2014-05-07 | — | — | EP | disclosed |
| US-8163948-B2 | Processes for producing transition metal amido and imido compounds | ALBEMARLE CORPORATION (US) | 2012-04-24 | — | — | US | disclosed |
| WO-2009108930-A9 | PROCESSES FOR PRODUCING TRANSITION METAL AMIDO AND IMIDO COMPOUNDS | ALBEMARLE CORPORATION (US) | 2011-08-11 | — | — | WO | disclosed |
| US-20100331562-A1 | PROCESSES FOR PRODUCING TRANSITION METAL AMIDO AND IMIDO COMPOUNDS | ALBEMARLE CORPORATION (US) | 2010-12-30 | — | — | US | disclosed |
| EP-2250146-A1 | PROCESSES FOR PRODUCING TRANSITION METAL AMIDO AND IMIDO COMPOUNDS | Albemarle Corporation (US) | 2010-11-17 | — | — | EP | disclosed |
| US-20090242414-A1 | ELECTRONCHEMICAL DEPOSITION OF TANTALUM AND/OR COPPER IN IONIC LIQUIDS | MERCK PATENT GMBH (DE) | 2009-10-01 | — | — | US | disclosed |
| WO-2009108930-A1 | PROCESSES FOR PRODUCING TRANSITION METAL AMIDO AND IMIDO COMPOUNDS | ALBEMARLE CORPORATION (US) | 2009-09-03 | — | — | WO | disclosed |