⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL301943 | 0.71 | — | — | |
| SCHEMBL2104643 | 0.69 | — | — | |
| SCHEMBL2102928 | 0.69 | — | — | |
| SCHEMBL2101587 | 0.69 | — | — | |
| SCHEMBL2102927 | 0.66 | — | — | |
| SCHEMBL2102604 | 0.65 | — | — | |
| SCHEMBL2100330 | 0.62 | — | — | |
| SCHEMBL2271595 | 0.62 | — | — | |
| SCHEMBL2104355 | 0.62 | — | — | |
| SCHEMBL2269021 | 0.59 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-107857774-A | Halogenated organoaminosilane precursors and methods of depositing thin films comprising the same | 弗萨姆材料美国有限责任公司 | 2018-03-30 | — | — | CN | claimed |
| US-8993072-B2 | Halogenated organoaminosilane precursors and methods for depositing films comprising same | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2015-03-31 | — | — | US | claimed |
| EP-2574611-B1 | Halogenated Organoaminosilane Precursors and Methods for Depositing Films Comprising Same | AIR PROD & CHEM (US) | 2016-03-23 | — | — | EP | disclosed |
| EP-2574611-A1 | Halogenated Organoaminosilane Precursors and Methods for Depositing Films Comprising Same | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-04-03 | — | — | EP | disclosed |
| US-8404584-B2 | Method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2013-03-26 | — | — | US | disclosed |
| US-8164166-B2 | Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2012-04-24 | — | — | US | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |
| US-20090085170-A1 | INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2009-04-02 | — | — | US | disclosed |