SCHEMBL21111529

SCHEMBL21111529

[Hf+4].[Hf+4].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL42701 1.00
SCHEMBL22687583 0.91
SCHEMBL664920 0.91
SCHEMBL1326284 0.80
SCHEMBL502686 0.80
SCHEMBL21951703 0.80
SCHEMBL21951515 0.80
SCHEMBL707294 0.80
SCHEMBL599231 0.80
SCHEMBL20943732 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3846226-B1 THIN FILM TRANSISTOR AND DISPLAY APPARATUS COMPRISING THE SAME LG DISPLAY CO LTD (KR) 2025-12-03 EP claimed
EP-3341464-B1 DEVICES, SYSTEMS AND METHODS FOR DETECTING VIABLE MICROORGANISMS IN A FLUID SAMPLE AVAILS MED INC (US) 2024-05-08 EP claimed
EP-3837227-B1 COATING REPAIR FOR CERAMIC MATRIX COMPOSITE (CMC) SUBSTRATES RTX CORP (US) 2024-03-13 EP claimed
EP-4050653-B1 METHOD FOR PREPARING SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR STRUCTURE CHANGXIN MEMORY TECH INC (CN) 2024-01-31 EP claimed
EP-4060718-B1 CAPACITOR STRUCTURE PREPARATION METHOD, CAPACITOR STRUCTURE, AND MEMORY CHANGXIN MEMORY TECH INC (CN) 2023-12-06 EP claimed
EP-3945553-B1 FABRICATING SUB-MICRON CONTACTS TO BURIED WELL DEVICES BOEING CO (US) 2023-11-29 EP claimed
EP-3344980-B1 CHEMICALLY-SENSITIVE FIELD EFFECT TRANSISTORS, SYSTEMS AND METHODS FOR USING THE SAME CARDEA BIO INC (US) 2023-07-26 EP claimed
EP-3044808-B1 METHODS OF FORMING A FERROELECTRIC MEMORY CELL AND RELATED SEMICONDUCTOR DEVICE STRUCTURES MICRON TECHNOLOGY INC (US) 2022-02-23 EP claimed
EP-4635278-A1 SEMICONDUCTOR DEVICE COMPRISING A CAPACITIVE STACK AND A PILLAR, AND METHOD FOR MANUFACTURING SAME Commissariat à l'Energie Atomique et aux Energies Alternatives (FR) 2025-10-22 EP disclosed
US-12154906-B2 Display device and method for manufacturing display device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2024-11-26 US disclosed
WO-2024171008-A1 SEMICONDUCTOR DEVICE 株式会社半導体エネルギー研究所 2024-08-22 WO disclosed
WO-2024126506-A1 SEMICONDUCTOR DEVICE COMPRISING A CAPACITIVE STACK AND A PILLAR, AND METHOD FOR MANUFACTURING SAME COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (FR) 2024-06-20 WO disclosed
US-20230132343-A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE SEMICONDUCTOR ENERGY LAB (JP) 2023-04-27 US disclosed
EP-4052297-A1 ELECTRONIC DEVICES COMPRISING METAL OXIDE MATERIALS AND RELATED METHODS AND SYSTEMS Micron Technology, Inc. (US) 2022-09-07 EP disclosed
US-10998341-B2 Display device and method for manufacturing display device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2021-05-04 US disclosed
US-20200212073-A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE SEMICONDUCTOR ENERGY LAB (JP) 2020-07-02 US disclosed
US-20190214410-A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE SEMICONDUCTOR ENERGY LAB (JP) 2019-07-11 US disclosed
CN-1902738-A Atomic layer deposition of high dielectric constant metal silicates AVIZA TECH INC (US) 2007-01-24 CN disclosed