SCHEMBL214622

SCHEMBL214622

[Ge+4].[H-].[H-].[H-].[H-]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2983188 1.00
SCHEMBL31378260 1.00
SCHEMBL277977 0.82
SCHEMBL5878108 0.82
SCHEMBL29359112 0.71
SCHEMBL29771968 0.71
SCHEMBL29473632 0.71
SCHEMBL53481 0.71
SCHEMBL29417862 0.71
SCHEMBL2356716 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1604 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260150592-A1 METHOD OF FORMING A SILICON ON INSULATOR SUBSTRATE SK Hynix Inc. (KR) 2026-05-28 US claimed
EP-4750304-A1 METHOD OF FORMING A SILICON ON INSULATOR SUBSTRATE SK hynix Inc. (KR) 2026-05-27 EP claimed
US-20260107547-A1 HIGH SENSITIVITY ETCHING WITH GERMANIUM-CONTAINING GASES TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-04-16 US claimed
US-20260047358-A1 HIGH GROWTH RATE SELECTIVE SI:P PROCESS APPLIED MATERIALS INC (US) 2026-02-12 US claimed
US-12520558-B2 High selectivity etching with germanium-containing gases TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 2026-01-06 US claimed
US-12484327-B2 Pre-cleaning for a deep trench isolation structure in a pixel sensor TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-11-25 US claimed
US-20250263864-A1 METHOD AND APPARATUS FOR LOW TEMPERATURE SELECTIVE EPITAXY IN A DEEP TRENCH APPLIED MATERIALS, INC. 2025-08-21 US claimed
US-12297559-B2 Method and apparatus for low temperature selective epitaxy in a deep trench APPLIED MATERIALS, INC. (US) 2025-05-13 US claimed
CN-222694358-U Mixed tail gas separation equipment and semiconductor process system 上海良薇机电工程有限公司 2025-04-01 CN claimed
CN-118543227-B Mixed tail gas separation equipment, method and semiconductor process system 上海良薇机电工程有限公司 2025-03-25 CN claimed
US-4668502-A ADDING ALKALI METAL BOROHYDRIDE TO A SOLUTION OF GERMANIUM OXIDE IN ALKALI METAL HYDROXIDE VOLTAIX, INC. (US) 1987-05-26 US claimed
US-4563217-A NONIONIC SURFACTANT STABILIZERS HITACHI, LTD. (JP) 1986-01-07 US claimed
EP-0132594-A1 Electroless copper plating solution HITACHI, LTD. (JP) 1985-02-13 EP claimed
US-4466992-A VAPOR DEPOSITION, SEMICONDUCTORS PHILLIPS PETROLEUM COMPANY (US) 1984-08-21 US claimed
US-4439536-A Hydrocarbon cracking catalyst PHILLIPS PETROLEUM COMPANY (US) 1984-03-27 US claimed
US-4386015-A TREATING AGENT IS GERMANIUM OR COMPOUNDS OF GERMANIUM PHILLIPS PETROLEUM COMPANY (US) 1983-05-31 US claimed
US-4334979-A TO PASSIVATE METAL DEPOSITS AND INCREASE YIELD OF GASOLINE PHILLIPS PETROLEUM COMPANY (US) 1982-06-15 US claimed
EP-0038047-A2 Cracking catalyst composition, passivating process and germanium compounds PHILLIPS PETROLEUM COMPANY (US) 1981-10-21 EP claimed
US-4137383-A Process for stabilizing chlorine-containing resins SEKISUI KAGAKU KOGYO KABUSHIKI KAISHA (JP) 1979-01-30 US claimed
US-4080317-A POLYESTERS CIBA-GEIGY AG (CH) 1978-03-21 US claimed