SCHEMBL215927

SCHEMBL215927

[Co].[Fe].[Tb]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9238650 1.00
SCHEMBL6364324 0.87
SCHEMBL7260936 0.87
SCHEMBL10413520 0.87
SCHEMBL7605946 0.87
SCHEMBL9504465 0.87
SCHEMBL5178085 0.87
SCHEMBL5470327 0.87
SCHEMBL8675105 0.87
SCHEMBL3791301 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 710 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12154603-B1 Spin-orbit torque (SOT) writer with topological insulator materials WESTERN DIGITAL TECHNOLOGIES, INC. (US) 2024-11-26 US claimed
US-12133472-B2 Magnetic storage device KIOXIA CORPORATION (JP) 2024-10-29 US claimed
WO-2024198492-A1 MAGNETIC COMPENSATION MTJ DEVICE, MANUFACTURING METHOD THEREFOR, AND MRAM DEVICE 浙江驰拓科技有限公司 2024-10-03 WO claimed
CN-118742190-A Magnetic compensation MTJ device, manufacturing method thereof and MRAM device 浙江驰拓科技有限公司 2024-10-01 CN claimed
US-11963462-B2 Magneto-resistive random access memory magnetic tunnel junction and cell with voltage-controlled writing HONEYWELL INTERNATIONAL INC. (US) 2024-04-16 US claimed
CN-117174129-A Structure of magnetic memory cell, preparation method and magnetic random access memory 华为技术有限公司 2023-12-05 CN claimed
US-20230301198-A1 MAGNETO-RESISTIVE RANDOM ACCESS MEMORY MAGNETIC TUNNEL JUNCTION AND CELL WITH VOLTAGE-CONTROLLED WRITING HONEYWELL INTERNATIONAL INC. (US) 2023-09-21 US claimed
CN-109549446-B Cooking apparatus 佛山市顺德区美的电热电器制造有限公司 2023-01-24 CN claimed
CN-115443548-A Magnetic tunnel junction and storage unit 华为技术有限公司 2022-12-06 CN claimed
WO-2022021169-A1 MAGNETIC TUNNEL JUNCTION AND STORAGE UNIT 华为技术有限公司 2022-02-03 WO claimed
EP-0448919-A2 Recording media International Business Machines Corporation (US) 1991-10-02 EP claimed
EP-0126589-B1 MULTI-LAYER AMORPHOUS OPTICAL RECORDING MEDIUM MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1991-07-17 EP claimed
US-4978584-A Having a reflector layer of silver, thulium sulfide, gold or nitrides of zirconium, titanium or hafnium SIEMENS AKTIENGESELLSCHAFT (DE) 1990-12-18 US claimed
US-4877690-A Magnetooptical recording element EASTMAN KODAK COMPANY (US) 1989-10-31 US claimed
EP-0125881-B1 AMORPHOUS MAGNETO OPTICAL RECORDING MEDIUM MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1989-09-20 EP claimed
EP-0305666-A1 Amorphous magneto optical recording medium MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1989-03-08 EP claimed
US-4615944-A MAGNETIC ANISOTROPY PERPENDICULAR TO FILM BURFACE MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1986-10-07 US claimed
US-4569881-A Multi-layer amorphous magneto optical recording medium MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1986-02-11 US claimed
EP-0126589-A2 Multi-layer amorphous optical recording medium MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1984-11-28 EP claimed
EP-0125881-A2 Amorphous magneto optical recording medium MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1984-11-21 EP claimed