SCHEMBL21998714

SCHEMBL21998714

CCOCC(C)(C)C1(C)CCCCC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21998608 0.98
SCHEMBL21998716 0.78
SCHEMBL21998609 0.76
SCHEMBL26971515 0.69 CHRM3 (0.39)
SCHEMBL2136873 0.67
SCHEMBL26971562 0.67
SCHEMBL812766 0.65
SCHEMBL10447437 0.64 HPGD (0.34)
SCHEMBL10305806 0.64 HPGD (0.34)
SCHEMBL10447629 0.64 HPGD (0.34)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 66 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2024-01-16 US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 US disclosed
US-11829068-B2 Resist composition, method of forming resist pattern, compound, and resin TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-28 US disclosed
US-11822240-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-21 US disclosed
US-11780946-B2 Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-10 US disclosed
US-11762288-B2 Resist composition, method of forming resist pattern, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-19 US disclosed
US-20230288806-A1 PHOTOSENSITIVE POLYMER CAPABLE OF MULTI-STEP DEPROTECTION REACTION, PHOTORESIST COMPOSITION INCLUDING THE PHOTOSENSITIVE POLYMER, AND METHOD OF MANUFACTURING THE INTEGRATED CIRCUIT DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-09-14 US disclosed
US-11754922-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 US disclosed
US-11754922-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 US disclosed
US-20200409259-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2020-12-31 US disclosed
US-20200409264-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2020-12-31 US disclosed
US-20200409262-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2020-12-31 US disclosed
US-20200192223-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2020-06-18 US disclosed
US-20200183273-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2020-06-11 US disclosed
US-20200183275-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2020-06-11 US disclosed
US-20200174366-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2020-06-04 US disclosed
US-20200174365-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2020-06-04 US disclosed
US-20200166837-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2020-05-28 US disclosed
US-20200150531-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2020-05-14 US disclosed