⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL15814350 | 0.82 | — | — | |
| SCHEMBL17867721 | 0.82 | — | — | |
| SCHEMBL183967 | 0.82 | — | — | |
| SCHEMBL1921974 | 0.82 | — | — | |
| SCHEMBL2227756 | 0.82 | — | — | |
| SCHEMBL2044172 | 0.82 | — | — | |
| SCHEMBL10704290 | 0.82 | — | — | |
| Phosphine SCHEMBL10533236 | 0.82 | — | — | |
| SCHEMBL22466876 | 0.82 | — | — | |
| SCHEMBL9857899 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1908 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260110824-A1 | ANTI-REFLECTIVE FILM, DISPLAY DEVICE INCLUDING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME | SAMSUNG DISPLAY CO LTD (KR) | 2026-04-23 | — | — | US | claimed |
| US-12593488-B2 | Compound semiconductor devices combined in a face-to-face arrangement | ANALOG DEVICES, INC. (US) | 2026-03-31 | — | — | US | claimed |
| US-12515943-B2 | Foundry-compatible through silicon via process for integrated micro-speaker and microphone | VIBRANT MICROSYSTEMS INC. (US) | 2026-01-06 | — | — | US | claimed |
| US-20260005670-A1 | FBAR STRUCTURE HAVING SINGLE CRYSTALLINE PIEZOELECTRIC LAYER AND FABRICATING METHOD THEREOF | SHENZHEN NEWSONIC TECH CO LTD (CN) | 2026-01-01 | — | — | US | claimed |
| US-20250353736-A1 | SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | claimed |
| US-12459004-B2 | Micromechanical component for a sound transducer and corresponding production method | ROBERT BOSCH GMBH (DE) | 2025-11-04 | — | — | US | claimed |
| US-12454455-B2 | Semiconductor structure and method of making | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2025-10-28 | — | — | US | claimed |
| CN-120136021-A | Touch sensor based on TSV switching | 杭州电子科技大学 | 2025-06-13 | — | — | CN | claimed |
| CN-222895347-U | Evaporation type condenser | 浙江盾安机电科技有限公司 | 2025-05-23 | — | — | CN | claimed |
| EP-3757884-B1 | INTEGRATED PIEZOELECTRIC MICROELECTROMECHANICAL ULTRASOUND TRANSDUCER (PMUT) ON INTEGRATED CIRCUIT (IC) FOR FINGERPRINT SENSING | INVENSENSE INC (US) | 2025-04-16 | — | — | EP | claimed |
| US-5225633-A | Bridge chip interconnect system | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE (US) | 1993-07-06 | — | — | US | claimed |
| US-5213877-A | Ceramic foundation with aluminum alloys | MITSUBISHI MATERIALS CORPORATION (JP) | 1993-05-25 | — | — | US | claimed |
| US-5196274-A | Electrolytic cell, aluminum and mercury amalgam anode | POPRAVSKY WALLACE N (US) | 1993-03-23 | — | — | US | claimed |
| US-5130498-A | Aluminum nitride, aluminum alloy, bonding layer, resistance against thermal stress | MITSUBISHI METAL CORPORATION (JP) | 1992-07-14 | — | — | US | claimed |
| US-5121174-A | Gate-to-ohmic metal contact scheme for III-V devices | VITESSE SEMICONDUCTOR CORPORATION (US) | 1992-06-09 | — | — | US | claimed |
| EP-0455229-A2 | Ceramic substrate used for fabricating electric or electronic circuit | MITSUBISHI MATERIALS CORPORATION (JP) | 1991-11-06 | — | — | EP | claimed |
| EP-0135230-B1 | SEMICONDUCTOR DEVICE, IN PARTICULAR A TRANSISTOR INCLUDING A PROTECTION MEANS AGAINST OVERVOLTAGE | RTC-COMPELEC (FR) | 1987-11-19 | — | — | EP | claimed |
| US-4635091-A | Semiconductor device having overload protection | U.S. PHILIPS CORPORATION (US) | 1987-01-06 | — | — | US | claimed |
| EP-0135230-A1 | Semiconductor device, in particular a transistor including a protection means against overvoltage | RTC-COMPELEC (FR) | 1985-03-27 | — | — | EP | claimed |
| US-4223434-A | Method of manufacturing a niobium-aluminum-germanium superconductive material | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY (US) | 1980-09-23 | — | — | US | claimed |