SCHEMBL22160013

SCHEMBL22160013

Oc1[c]c2c(c(-c3ccccc3)c1-c1ccccc1)-c1ccccc1C2

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDR P35968 1/20 0.36
ALDH1A1 P00352 3/20 0.33
HPGD P15428 1/20 0.33
BCL2L1 Q07817 1/20 0.33
HSD17B10 Q99714 1/20 0.33
HDAC4 P56524 1/20 0.33
HDAC2 Q92769 1/20 0.33
HDAC8 Q9BY41 1/20 0.33
HDAC6 Q9UBN7 1/20 0.33
ADORA2A P29274 1/20 0.33
ADORA1 P30542 1/20 0.33
MAOA P21397 1/20 0.32
CHEK1 O14757 1/20 0.32
SRD5A2 P31213 1/20 0.32
HNF4A P41235 1/20 0.31
SQOR Q9Y6N5 1/20 0.31
BCHE P06276 1/20 0.31
CES1 P23141 1/20 0.31
BACE1 P56817 1/20 0.31
RNASEH1 O60930 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21899664 0.82 KDR (0.36) KDRALDH1A1ADORA2AADORA1MAOA
SCHEMBL22160021 0.76 CYP1A2 (0.33) ALDH1A1HPGDCYP1A2POLBHTR2B
SCHEMBL2359255 0.70 MAP3K9 (0.41) KDRALDH1A1HPGDBCL2L1HSD17B10
SCHEMBL29730500 0.70 MAP3K9 (0.46) KDRADORA2AADORA1MAOASQOR
SCHEMBL31123421 0.70 MAP3K9 (0.46) KDRADORA2AADORA1MAOASQOR
SCHEMBL28145785 0.70 MAP3K9 (0.46) KDRADORA2AADORA1MAOASQOR
SCHEMBL18337985 0.69 KDR (0.42) KDRALDH1A1HPGDBCL2L1HSD17B10
SCHEMBL21899663 0.69 PRCP (0.33) ADORA2AADORA1
SCHEMBL2359259 0.68 KDR (0.41) KDRALDH1A1HPGDBCL2L1HSD17B10
SCHEMBL18337982 0.68 MAP3K9 (0.41) KDRALDH1A1HPGDBCL2L1HSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110713588-B Hardmask composition, hardmask layer and method of forming pattern 三星SDI株式会社 2022-08-09 CN claimed
US-11214678-B2 Hardmask composition, hardmask layer and method of forming patterns SAMSUNG SDI CO., LTD. (KR) 2022-01-04 US claimed
CN-110713588-A Hardmask composition, hardmask layer and method of forming pattern 三星SDI株式会社 2020-01-21 CN claimed
CN-111378084-B Polymer and hardmask composition and method of forming pattern 三星SDI株式会社 2023-08-08 CN disclosed
CN-110713588-B Hardmask composition, hardmask layer and method of forming pattern 三星SDI株式会社 2022-08-09 CN disclosed
US-11220570-B2 Polymer, hardmask composition, and method of forming patterns SAMSUNG SDI CO., LTD. (KR) 2022-01-11 US disclosed
US-11214678-B2 Hardmask composition, hardmask layer and method of forming patterns SAMSUNG SDI CO., LTD. (KR) 2022-01-04 US disclosed
CN-111378084-A Polymer and hardmask composition and method of forming a pattern 三星SDI株式会社 2020-07-07 CN disclosed
US-20200207902-A1 POLYMER, HARDMASK COMPOSITION, AND METHOD OF FORMING PATTERNS SAMSUNG SDI CO., LTD. (KR) 2020-07-02 US disclosed
CN-110713588-A Hardmask composition, hardmask layer and method of forming pattern 三星SDI株式会社 2020-01-21 CN disclosed