SCHEMBL222862

SCHEMBL222862

[Mg+2].[O-2].[Zn]

nearest known ligand 0.00

Known targets — ChEMBL curated mechanism

ATP4AATP4BGABBR1GABBR2HMGCR

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17416913 0.87
SCHEMBL9387023 0.87
SCHEMBL11405593 0.82
SCHEMBL9126642 0.82
SCHEMBL9233 0.82
SCHEMBL1735167 0.82
SCHEMBL15993945 0.82
SCHEMBL8013106 0.82
SCHEMBL10941621 0.82
SCHEMBL7997997 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 103 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118563321-B Production method and equipment of sapphire-based tellurium-nitrogen co-doped zinc oxide transparent conductive material 国鲸合创(青岛)科技有限公司 2024-10-29 CN claimed
CN-118516764-B Complete equipment for producing sapphire-based aluminum-doped zinc oxide transparent conductive monocrystalline film material 国鲸合创(青岛)科技有限公司 2024-10-25 CN claimed
CN-118563321-A Production method and equipment of sapphire-based tellurium-nitrogen co-doped zinc oxide transparent conductive material 国鲸合创(青岛)科技有限公司 2024-08-30 CN claimed
CN-118540974-A Sapphire-based transparent organic electroluminescent diode and transparent photoelectric device 国鲸合创(青岛)科技有限公司 2024-08-23 CN claimed
CN-118516764-A Complete equipment for producing sapphire-based aluminum-doped zinc oxide transparent conductive monocrystalline film material 国鲸合创(青岛)科技有限公司 2024-08-20 CN claimed
CN-118315498-B Preparation process equipment and method for sapphire-based transparent near ultraviolet light-emitting device 国鲸科技(广东横琴粤澳深度合作区)有限公司 2024-08-09 CN claimed
CN-118315498-A Preparation process equipment and method for sapphire-based transparent near ultraviolet light-emitting device 国鲸科技(广东横琴粤澳深度合作区)有限公司 2024-07-09 CN claimed
CN-118136758-B Stress regulation and control structure of sapphire-based zinc oxide transparent electrode film material 国鲸科技(广东横琴粤澳深度合作区)有限公司 2024-07-09 CN claimed
CN-118136758-A Stress regulation and control structure of sapphire-based zinc oxide transparent electrode film material 国鲸科技(广东横琴粤澳深度合作区)有限公司 2024-06-04 CN claimed
CN-117858591-A Preparation technology of high-performance green perovskite light-emitting diode 浙江大学温州研究院 2024-04-09 CN claimed
CN-117567147-A Zinc-magnesium oxide material and preparation method thereof 先导薄膜材料(广东)有限公司 2024-02-20 CN claimed
EP-4002494-A1 OPTOELECTRONIC DEVICE AIT Austrian Institute of Technology GmbH (AT) 2022-05-25 EP claimed
US-20140170806-A1 TCOs for High-Efficiency Crystalline Si Heterojunction Solar Cells INTERMOLECULAR, INC. (US) 2014-06-19 US claimed
US-20120001171-A1 Semiconductor Structures with Rare-earths TRANSLUCENT INC. (US) 2012-01-05 US claimed
US-20090236595-A1 Semiconductor Structures with Rare-earths TRANSLUCENT PHOTONICS, INC. (US) 2009-09-24 US claimed
WO-2009052224-A2 SEMICONDUCTOR STRUCTURES WITH RARE-EARTHS TRANSLUCENT PHOTONICS, INC. (US) 2009-04-23 WO claimed
US-20250338735-A1 FLEXIBLE DISPLAY DEVICE LG DISPLAY CO., LTD. (KR) 2025-10-30 US disclosed
US-12364124-B2 Flexible display device LG DISPLAY CO., LTD. (KR) 2025-07-15 US disclosed
CN-100379078-C Digital battery DINOF RESCHEAR CO LTD (US) 2008-04-02 CN disclosed
CN-1599965-A Digital battery DINOF RESCHEAR CO LTD (US) 2005-03-23 CN disclosed