SCHEMBL2229927

SCHEMBL2229927

[CH2]CCOC[CH]C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7630019 0.83
SCHEMBL9002130 0.81
SCHEMBL3484345 0.80
SCHEMBL3462074 0.79
SCHEMBL3483416 0.79
SCHEMBL9569112 0.78
SCHEMBL1017243 0.78
SCHEMBL9220608 0.78
SCHEMBL939722 0.78 MEN1 (0.32)
SCHEMBL2231208 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2360527-B1 Patterning process using EB or EUV lithography SHINETSU CHEMICAL CO (JP) 2017-08-23 EP disclosed
EP-2360525-B1 Chemically amplified positive resist composition and pattern forming process SHINETSU CHEMICAL CO (JP) 2017-08-23 EP disclosed
EP-2360526-B1 Chemically amplified negative resist composition for E beam or EUV lithography and patterning process SHINETSU CHEMICAL CO (JP) 2017-08-16 EP disclosed
US-9318776-B2 Nonaqueous electrolyte solution and electricity storage device using same UBE INDUSTRIES, LTD. (JP) 2016-04-19 US disclosed
US-20150333370-A1 NONAQUEOUS ELECTROLYTE SOLUTION AND ELECTRICITY STORAGE DEVICE USING SAME UBE INDUSTRIES, LTD. (JP) 2015-11-19 US disclosed
EP-2889947-A1 NONAQUEOUS ELECTROLYTE SOLUTION AND ELECTRICITY STORAGE DEVICE USING SAME UBE Industries, Ltd. (JP) 2015-07-01 EP disclosed
US-8546060-B2 Chemically amplified positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-10-01 US disclosed
US-8470511-B2 Chemically amplified negative resist composition for EB or EUV lithography and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-06-25 US disclosed
US-8426108-B2 Chemically amplified positive resist composition for EB or EUV lithography and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-23 US disclosed
EP-2360525-A1 Chemically amplified positive resist composition and pattern forming process Shin-Etsu Chemical Co., Ltd. (JP) 2011-08-24 EP disclosed
EP-2360526-A1 Chemically amplified negative resist composition for E beam or EUV lithography and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2011-08-24 EP disclosed
EP-2360527-A1 Chemically amplified positive resist composition for EB or EUV lithography and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2011-08-24 EP disclosed
US-20110200941-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR EB OR EUV LITHOGRAPHY AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-18 US disclosed
US-20110200942-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION FOR EB OR EUV LITHOGRAPHY AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-18 US disclosed
US-20110200919-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-18 US disclosed
EP-2011811-A1 ACTIVE RAY CURABLE COMPOSITION, ACTIVE RAY CURABLE INKJET INK, IMAGE FORMING METHOD USING THE ACTIVE RAY CURABLE INKJET INK, AND INKJET RECORDING APPARATUS Konica Minolta Medical & Graphic, Inc. (JP) 2009-01-07 EP disclosed