SCHEMBL2229944

SCHEMBL2229944

C[SiH2]C1CCCCO1.[PoH2]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20168 0.97
SCHEMBL28132514 0.97
SCHEMBL28086676 0.95
SCHEMBL28226535 0.95
SCHEMBL27650623 0.95
SCHEMBL25397062 0.95
Methane SCHEMBL251799 0.95
Methane SCHEMBL5484517 0.95
SCHEMBL22462258 0.95
Ethane SCHEMBL28170087 0.95

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20090306147-A1 BIOLOGICAL EFFICACY OF AGROCHEMICAL COMPOSITIONS ON APPLICATION IN THE GROWTH SUBSTRATE SUITABLE FORMULATIONS AND USE THEREOF BAYER CROPSCIENCE AG (DE) 2009-12-10 US claimed
WO-2009118025-A1 METHOD FOR CONTROLLING ANIMAL PEST AND PLANT PATHOGENIC FUNGI BY APPLYING AN AGROCHEMICAL COMPOSITION INTO THE CULTURE MEDIUM, SUITABLE FORMULATION AND USE THEREOF BAYER CROPSCIENCE AKTIENGESELLSCHAFT (DE) 2009-10-01 WO claimed
EP-1799739-A1 GELS AorTech Biomaterials Pty Ltd (AU) 2007-06-27 EP claimed
WO-2006034547-A1 GELS AORTECH BIOMATERIALS PTY LTD (AU) 2006-04-06 WO claimed
US-20110178195-A1 COMPOSITIONS FOR ABRASION RESISTANT FOAMS AND METHODS FOR MAKING THE SAME DOW GLOBAL TECHNOLOGIES LLC (US) 2011-07-21 US disclosed
US-7453090-B2 Semiconductor device including a semiconductor substrate formed with a shallow impurity region KABUSHIKI KAISHA TOSHIBA (JP) 2008-11-18 US disclosed
US-20070138567-A1 Semiconductor device including a semiconductor substrate formed with a shallow impurity region, and a fabrication method for the same KABUSHIKI KAISHA TOSHIBA (JP) 2007-06-21 US disclosed
US-7189624-B2 Fabrication method for a semiconductor device including a semiconductor substrate formed with a shallow impurity region KABUSHIKI KAISHA TOSHIBA (JP) 2007-03-13 US disclosed
US-20050023577-A1 Semiconductor device including a semiconductor substrate formed with a shallow impurity region, and a fabrication method for the same KABUSHIKI KAISHA TOSHIBA (JP) 2005-02-03 US disclosed
US-6096476-A DIRECTLY IMAGEABLE RAW PLATE HAVING A HEAT INSULATING LAYER, HEAT SENSITIVE LAYER COMPRISING A LIGHT TO HEAT CONVERTING MATERIAL AND INK REPLELLENT LAYER IN THIS ORDER ON SUBSTRATE; PLATE HAS SPECIFIED ELASTIC MODULUS AND TENSILE PROPERTIES TORAY INDUSTRIES, INC. (JP) 2000-08-01 US disclosed