⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL30066882 | 0.82 | — | — | |
| SCHEMBL81723 | 0.82 | — | — | |
| SCHEMBL992430 | 0.67 | — | — | |
| SCHEMBL18575287 | 0.67 | — | — | |
| SCHEMBL3164524 | 0.67 | — | — | |
| SCHEMBL11110633 | 0.67 | — | — | |
| SCHEMBL17923637 | 0.67 | — | — | |
| SCHEMBL242046 | 0.67 | — | — | |
| SCHEMBL2387886 | 0.67 | — | — | |
| SCHEMBL21177129 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8933449-B2 | Apparatus having a dielectric containing scandium and gadolinium | MICRON TECHNOLOGY, INC. (US) | 2015-01-13 | — | — | US | disclosed |
| US-20140084355-A1 | APPARATUS HAVING A DIELECTRIC CONTAINING SCANDIUM AND GADOLINIUM | MICRON TECHNOLOGY, INC. (US) | 2014-03-27 | — | — | US | disclosed |
| US-8603907-B2 | Apparatus having a dielectric containing scandium and gadolinium | MICRON TECHNOLOGY, INC. (US) | 2013-12-10 | — | — | US | disclosed |
| US-20110300701-A1 | APPARATUS HAVING A DIELECTRIC CONTAINING SCANDIUM AND GADOLINIUM | MICRON SEMICONDUCTOR PRODUCTS, INC. | 2011-12-08 | — | — | US | disclosed |
| US-8003985-B2 | Apparatus having a dielectric containing scandium and gadolinium | MICRON TECHNOLOGY, INC. (US) | 2011-08-23 | — | — | US | disclosed |
| US-20090152620-A1 | ATOMIC LAYER DEPOSITION OF GdScO3 FILMS AS GATE DIELECTRICS | MICRON TECHNOLOGY, INC. | 2009-06-18 | — | — | US | disclosed |
| US-7544596-B2 | Atomic layer deposition of GdScO3 films as gate dielectrics | MICRON TECHNOLOGY, INC. (US) | 2009-06-09 | — | — | US | disclosed |
| US-20070048989-A1 | Atomic layer deposition of GdScO3 films as gate dielectrics | MICRON TECHNOLOGY, INC. | 2007-03-01 | — | — | US | disclosed |